نتایج جستجو برای: Photoelectric effect

تعداد نتایج: 1643298  

Journal: :journal of biomedical physics and engineering 0
s. chatterjee indian institute of astrophysics, bangalore 560034, india a. vyas indian institute of astrophysics, bangalore 560034, india r. ravanfar haghighi medical physics unit, all india institute of medical sciences, ansari nagar, new delhi 110029 india p. kumar medical physics unit, all india institute of medical sciences, ansari nagar, new delhi 110029 india

introduction: the photoelectric attenuation coefficient of substances is known to depend upon the energy e of the photon and the effective atomic number of substances (zeff) as (zeff x /e y ).  no definitive values about these indices x, y are given in the literature. the index x is said to lie between, 3.0 and 4.0, while for ‘y’ different values have been assigned, between 3.0 and 4.0. methodo...

2008
S. L. Vesely A. A. Vesely

Experimental evidence of the photoelectric effect goes back to H. Hertz. It occurred during the famous confirmation experiments of the Maxwellian theory. It is commonly held however that it cannot be explained in the framework of that theory. We are calling attention to some aspects linked with the interpretation of that effect on which, in our opinion, it is worth-

Journal: :Physical review letters 2007
A A Sorokin S V Bobashev T Feigl K Tiedtke H Wabnitz M Richter

In the spectral range of the extreme ultraviolet at a wavelength of 13.3 nm, we have studied the photoionization of xenon at ultrahigh intensities. For our ion mass-to-charge spectroscopy experiments, irradiance levels from 10(12) to 10(16) W cm(-2) were achieved at the new free-electron laser in Hamburg FLASH by strong beam focusing with the aid of a spherical multilayer mirror. Ion charges up...

Journal: :Journal of the Physical Society of Japan 2006

Journal: :Proceedings of the Royal Society A: Mathematical, Physical and Engineering Sciences 1935

2007
Vakho Makarashvili

Geant4 simulations were performed to determine electron binding energies in aluminum using two different implementation of the photoelectric effect: G4PotoElectricEffect and G4LowEnergyPhotoElectric. The incident photon energies used in the simulation were 20 eV, 100 eV, 1 keV and 2 keV. The binding energies of the knocked out electrons were calculated as a difference between photon incident en...

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