Two-dimensional passive photodiode matrices are hardly useful for image sensing due to the crosstalk between pixels. This crosstalk makes it difficult to recover information from individual pixels. A switching unit attached to each sensing unit has been the common solution in image sensors (such as in CMOS sensors and in TFT-PiN a-Si photosensors). A novel organic photodiode with voltage-switch...

In this lab, we explore the principles of the use of a lock-in amplifier, using a He-Ne laser, light chopper, and a photodiode as the lock-in input. We explain and use the concepts of phase sensitive detection, dynamic reserve, and time constants to determine both the range of linearity of the photodiode in use, as well as the frequency response of the photodiode. Furthermore, we determine whet...

In this study, a laterally coupled device composed of a photodiode and a Si nanowires-field-effect transistor (NWs-FET) is constructed on a plastic substrate and the coupled device is characterized. The photodiode is made of p-type Si NWs and an n-type ZnO film. The Si NWs-FET is connected electrically to the photodiode in order to enhance the latter's photocurrent efficiency by adjusting the g...

A fast photodiode was demonstrated to be able to extract the turn by turn photon beam profile information of electron storage rings if the photodiode was operated at the saturated region. When applied this method to a 1.3 GeV synchrotron light source with 200 mA beam current, the synchrotron radiation intensity is not intense enough to saturate the photodiode. To apply this method to the type o...

This work presents a method for large signal characterization of avalanche photodiode (APD) where measurements were carried out using pulsed RF signal at different DC bias points to extract dispersive parameters of the avalanche photodiode. Pulsed optical excitation on the photodiode were synchronized with the pulsed RF signal using a synchronization circuit and in this way characterization of ...

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An accurate photodiode model for DC as well as high frequency SPICE circuit simulation is presented in this paper. The accuracy of the proposed model is verified with the measured data obtained from two different types of photodiodes, namely, n/p-substrate photodiode and nwell/p-substrate photodiode, which are fabricated using a conventional 0.25μm CMOS technology. The simulation results of the...

in this paper, we calculate electron and hole impactionization coefficients in in0.52al0.48as using a monte carlo modelwhich has two valleys and two bands for electrons and holesrespectively. also, we calculate multiplication factor for electronand hole initiated multiplication regimes and breakdown voltagein in0.52al0.48as pin avalanche photodiodes. to validate themodel, we compare our simulat...