OECTs capable of undergoing a reversible modulation ON current by up to 30% via irradiation with UV and visible light were realised blending mixed ionic–electronic polymer (pgBTTT) photoswitching spiropyran derivative (OEG-SP).

Graphene based optical devices are highly recommended and interested for integrated optical circuits. As a main component of an optical link, a photodetector based on graphene nano-ribbons is proposed and studied. A quantum transport model is presented for simulation of a graphene nano-ribbon (GNR) -based photo-transistor based on non-equilibrium Green’s function method. In the proposed model a...

Schottky Barriers In article number 2213254, Jian-Bin Xu, and co-workers demonstrate that the vertically stacked barrier transistor with semimetal contact enables simultaneous integration of electrode self-gating function to achieve reversible direction photo-generated-charge separation, which envisaged integrate nonvolatility reconfigurable photo response build a promising photo-powered in-mem...

A wide dynamic image CMOS image sensor with a user adjustable logarithmic photo-response is presented. A pMOS switch and a time-dependent reference voltage are integrated into a three-transistor (3T) pixel structure to implement a logarithmic response. Several pixels have been manufactured using a 0.25μm standard CMOS technology. Compared to the conventional logarithmic response pixel based on ...

We propose photo-BJMOSFET (Bipolar Junction Metal-Oxide-Semiconductor Field Effect Transistor) fabricated on SOI film. ITO film is adopted in the device as gate electrode to reduce light absorption. I-V characteristics of photo-BJMOSFET obtained in dark (dark current) and under 570nm illumination (photo current) are studied furthermore to achieve high photo-to-dark-current contrast ratio. Two v...

Diamond Junction Field Effect Transistor Ultrawide bandgap semiconductors offer a new playground for researchers thanks to their huge energy scale. In article 2100542, Julien Pernot and co-workers create diamond junction field effect transistor from non-volatile photo-switch by taking advantage of the deep ionisation nitrogen donor in n-type region. The state can only be switched under illumina...

An image sensor comprising an array of 128 by 50 super pixels, column parallel current conveyors and global difference double sampling (DDS) unit is presented. The super pixel consists of: a reset transistor, a readout transistor, four transfer transistors and four photodiodes. The photo pixel address switch is placed outside the pixel, effectively implementing 1.5 transistors per pixel using a...

We present a single-transistor pixel for CMOS image sensors (CIS). It is a floating-body MOSFET structure, which is used as photo-sensing device and source-follower transistor, and can be controlled to store and evacuate charges. Our investigation into this 1T pixel structure includes modeling to obtain analytical description of conversion gain. Model validation has been done by comparing theor...