نتایج جستجو برای: Passivation layer
تعداد نتایج: 285451 فیلتر نتایج به سال:
Intrinsic hydrogenated amorphous silicon (a-Si:H) films can yield in outstanding electronic surface passivation of crystalline silicon (c-Si) wafers as utilized in the HIT (heterojunction with intrinsic thin layer) solar cells. We have studied the correlation between the passivation quality and the interface nature between thin amorphous layers and an underlying c-Si substrate for understanding...
The suitability of titaniumnitride (TiN) for GaAs surface passivation and protection is investigated. A 2–6nm thick TiN passivation layer is deposited by atomic layer deposition (ALD) at 275 C on top of InGaAs/ GaAs near surface quantum well (NSQW) structures to study the surface passivation. X-ray reflectivity measurements are used to determine the physical properties of the passivation layer....
The relatively low power conversion efficiency (PCE) of quantum dot sensitized solar cells (QDSSCs) is attributed to charge recombination at the interfaces. Charge recombination process could be suppressed by coating the QD layer with a wide band gap semiconductor such as ZnS, which acts as a blocking layer between the QDs and hole transport material (HTM). In present study, to improve PCE of P...
A solution-processed photosensitive passivation layer with a low dielectric constant (PPLD) has been developed for an a-Si thin film transistor. The PPLD has three highly important properties: a low leakage current, low water absorption, and high-transparency. In addition to providing passivation, the PPLD doubles as a planarization layer. The photoactive property of the PPLD is convenient for ...
The sensitivity of graphene based devices to surface adsorbates and charge traps at the graphene/dielectric interface requires proper device passivation in order to operate them reproducibly under ambient conditions. Here we report on the use of atomic layer deposited aluminum oxide as passivation layer on graphene field effect devices (GFETs). We show that successful passivation produce hyster...
Silicon surface passivation of hydrogenated silicon (Si:H) thin films deposited by radio frequency (RF) and direct current (DC) plasma process was investigated by measuring effective minority carrier lifetime (τeff) on Si (100) and (111) wafers and correlated with the silicon heterojunction (SHJ) cell performances. Apparently the higher ion bombardment in DC compared to RF plasma during growth ...
Hydrogenated intrinsic amorphous silicon ((i) a-Si:H) can be grown by plasma-enhanced chemical vapor deposition with a non-columnar or columnar morphology. Nuclear resonant reaction analysis and corresponding effective stopping cross section analysis indicate a dependency of hydrogen effusion on the morphology of the (i) a-Si:H layer as well as the doping type and concentration of the c-Si wafe...
The present work aims to improve the sensitivity of an electrical biosensor by simply changing a surface property of the passivation layer, which covers the background region except for the sensing site for electrical isolation among adjacent interconnection lines. The hydrophobic passivation layer dramatically enhances the sensitivity of the biosensor when compared with a hydrophilic passivati...
Thermal atomic layer deposition (ALD)-grown AlN passivation layer is applied on AlGaN/GaN-on-Si HEMT, and the impacts on drive current and leakage current are investigated. The thermal ALD-grown 30-nm amorphous AlN results in a suppressed off-state leakage; however, its drive current is unchanged. It was also observed by nano-beam diffraction method that thermal ALD-amorphous AlN layer barely e...
Despite the unique properties of black phosphorus (BP) and phosphorene, including high carrier mobility and in-plane anisotropy, their stability has been hampered by significant crystal deterioration upon exposure to oxygen and water. Herein, we investigate the chemical stability of MoS2-passivated black phosphorus (BP) or bilayer (2L) phosphorene van der Waals (vdW) heterostructures using the ...
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