Passivation hermiticity is always a concern in integration circuit fabrication and application. Passivation stress is one of the key factors for the passivation integrity. In this paper, passivation stress is investigated as a function of top metal profiles with a 3Dimentional Finite Element Modeling (3D FEM). A new structure is proposed for reducing the passivation stress at the corner of a to...

Surface passivation is critical for effective PCR using silicon-glass chips. We tested a dynamic polymer-based surface passivation method. Polyethylene glycol 8000 (PEG 8000) or polyvinylpyrrolidone 40 (PVP-40) applied at 0.75% (w/v) in the reaction mixture produced significant surface passivation effects using either native or SiO2-precoated silicon-glass chips. PCR amplification was achieved ...

The suitability of titaniumnitride (TiN) for GaAs surface passivation and protection is investigated. A 2–6nm thick TiN passivation layer is deposited by atomic layer deposition (ALD) at 275 C on top of InGaAs/ GaAs near surface quantum well (NSQW) structures to study the surface passivation. X-ray reflectivity measurements are used to determine the physical properties of the passivation layer....

a proposed method for protecting carbon steel and hence reducing iron release in an aqueous solution saturated with h2s is presented in this paper. the method is based on forming a stable and resistant sulfide layer (pyrite, fes2, or pyrrhotite, fe(1-x)s, phase or a mixture of both) on the carbon steel surface. the study on the formation of the sulfide layer was carried out considering the effe...

We have studied the efficacy of (NH4)2Sx surface passivation on the (311)A GaAs surface. We report XPS studies of simultaneously-grown (311)A and (100) heterostructures showing that the (NH4)2Sx solution removes surface oxide and sulfidizes both surfaces. Passivation is often characterized using photoluminescence measurements; we show that while (NH4)2Sx treatment gives a 40-60 ×  increase in p...

Two different techniques for the electronic surface passivation of silicon solar cells, the plasma-enhanced chemical vapour deposition of silicon nitride (SiN) and the fabrication of thin thermal silicon oxide/plasma SiN stack structures, are investigated. It is demonstrated that, despite their low thermal budget, both techniques are capable of giving an outstanding surface passivation quality ...

As a newly developed conductive ceramic with wide application prospects, the electrochemical corrosion behavior of Ti3SiC2 in 3.5% NaCl solution was investigated by potentiodynamic polarization, potentiostatic polarization and electrochemical impedance spectroscopy. Commercially pure titanium (CP Ti) was selected for comparative, and cooperated with XRD, XPS, SEM, the passivation behavior, corr...

We have performed a comprehensive study into low temperature ( 500 °C) internal gettering in multicrystalline silicon (mc-Si). Two groups of as-grown mc-Si wafers from different ingot height positions were subjected to the same thermal treatments with surface passivation by either silicon nitride (SiNx:H) or a temporary iodine-ethanol (I-E) chemical solution . With either passivation scheme, l...

AlGaN/GaN Schottky Barrier Diodes (SBDs) employing the Diamond-like Carbon (DLC) passivation was proposed. The reverse blocking characteristics of the AlGaN/GaN SBD is degraded by the electron trapping effect through the surface trap states. In order to suppress the electron trapping effect and increase the breakdown voltage of AlGaN/GaN SBDs, the surface passivation or treatment should be perf...

The effect of semiconductor passivation on quantum-dot-sensitized solar cells (QDSCs) has been systematically characterized for CdS and CdS/ZnS. We have found that passivation strongly depends on the passivation agent, obtaining an enhancement of the solar cell efficiency for compounds containing amine and thiol groups and, in contrast, a decrease in performance for passivating agents with acid...