نتایج جستجو برای: Parasitic current
تعداد نتایج: 807654 فیلتر نتایج به سال:
a simple semi-phenomenological model, which accurately predicts the dependence of thresholdcurrent for temperature of resonant-phonon three well quantum cascade laser based on verticaltransitions is offered. we found that, the longitude optical phonon scattering of thermally excitedelectrons is the most important limiting factor for thermal performance of high frequency thz qcls.in low frequenc...
In biaxially strained p-MOSFET with Si channel, formation of a parasitic parallel channel due to misalignment of energy bands degrades device performance by increasing off-state current. In this paper a new approach has been introduced to eliminate this parasitic channel by increasing the dopant concentration of virtual substrate up to . Using simulation the impact of this method on the parasit...
in biaxially strained p-mosfet with si channel, formation of a parasitic parallel channel due to misalignment of energy bands degrades device performance by increasing off-state current. in this paper a new approach has been introduced to eliminate this parasitic channel by increasing the dopant concentration of virtual substrate up to . using simulation the impact of this method on the parasit...
One of the most critical components in a step-up design like Figure 1 is the transformer. Transformers have parasitic components that can cause them to deviate from their ideal characteristics, and the parasitic capacitance associated with the secondary can cause large resonating current spikes on the leading edge of the switch current waveform. These spikes can cause the regulator to exhibit e...
More than 50 species of zoonotic parasites (nematodes-18 spp., trematodes-19 spp., cestodes-IO spp., protozoa-2 spp., and arthropods-2 spp.) have been reported in Taiwan. Among them, Angiostrongylus cantonensis, Clonorchis sinensis and Taenia saginata are the most important and most common food-borne parasites. Angiostrongyliasis is highly endemic in southern and eastern Taiwan. About 80"10of p...
Shallow trench isolation (STI) has become the most promising isolation scheme for ULSI applications. However, the trench isolation suffers from dislocations and oxidation induced stacking faults. Such faults are typically located near trench edges. These STI faults increase the junction leakage current and may turn-on the parasitic STI MOSFET resulting in significant leakage current through the...
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