نتایج جستجو برای: Non-linear GaN
تعداد نتایج: 1714688 فیلتر نتایج به سال:
nowadays in trade and economic issues, prediction is proposed as the most important branch of science. existence of effective variables, caused various sectors of the economic and business executives to prefer having mechanisms which can be used in their decisions. in recent years, several advances have led to various challenges in the science of forecasting. economical managers in various fi...
چکیده ندارد.
A new non-linear method for design and analysis of solid state power amplifiers is presented and applied to an aluminum gallium nitride, gallium nitride (AlGaN-GaN) high electron-mobility transistor (HEMTs) on silicon-carbide (SiC) substrate for Ku band (12.4 13.6 GHz) applications. With combining output power of 8 transistors, maximum output power of 46.3 dBm (42.6 W), PAE of 43% and linear ga...
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Generative adversarial nets (GANs) are a promising technique for modeling a distribution from samples. It is however well known that GAN training suffers from instability due to the nature of its saddle point formulation. In this paper, we explore ways to tackle the instability problem by dualizing the discriminator. We start from linear discriminators in which case conjugate duality provides a...
InGaN light emitting diodes (LED) structure with an embedded 1/4λ-stack nanoporous-GaN/undoped-GaN distributed Bragg reflectors (DBR) structure have been demonstrated. Si-heavily doped GaN epitaxial layers (n(+)-GaN) in the 12-period n(+)-GaN/u-GaN stack structure are transformed into low refractive index nanoporous GaN structure through the doping-selective electrochemical wet etching process....
In this paper, we present a novel Loss-Sensitive GAN (LS-GAN) that learns a loss function to separate generated samplesfrom their real examples. An important property of the LS-GAN is it allows the generator to focus on improving poor data points that are far apart from real examples rather than wasting efforts on those samples that have already been well generated, and thus can improve...
The band offsets of non-polar A-plane GaN/AlN and AlN/GaN heterojunctions are measured by X-ray photoemission spectroscopy. A large forward-backward asymmetry is observed in the non-polar GaN/AlN and AlN/GaN heterojunctions. The valence-band offsets in the non-polar A-plane GaN/AlN and AlN/GaN heterojunctions are determined to be 1.33 ± 0.16 and 0.73 ± 0.16 eV, respectively. The large valence-b...
GaN nanostructures with various effective refractive index profiles (Linear, Cubic, and Quintic functions) were numerically studied as broadband omnidirectional antireflection structures for concentrator photovoltaics by using three-dimensional finite difference time domain (3D-FDTD) method. Effective medium theory was used to design the surface structures corresponding to different refractive ...
هدف این پروژه تخمین معادلاتی برای این نوع صفحات می باشد، که ضرایب شدت تنش و تمرکز تنش و مقادیر j-integral و سایر پارامترهای کنترلی را بر حسب هندسه شکل بیان می کنند. این معادلات از طریق تحلیلهای ترک بوسیله نرم افزار المان محدود ansys و با استفاده از روش non linear regression method به دست آمده اند و در نهایت منجر به معادلاتی می شوند که با داشتن ضریب تمرکز تنش (از یک تحلیل الاستیک ساد...
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