In this research, geometrical structures of armchair single walled boron nitride nanotube (SWBNNT) and armchair single walled aluminum nitride nanotube (SWAlNNT) were optimized by Density Functional Theory (DFT) in the gas phase, both having the same length of 5 angstrom and n=9, m=9. B3LYP/6-31G* level of theory have been used to determine and compare electronic properties, n...

In this research, geometrical structures of armchair single walled boron nitride nanotube (SWBNNT) and armchair single walled aluminum nitride nanotube (SWAlNNT) were optimized by Density Functional Theory (DFT) in the gas phase, both having the same length of 5 angstrom and n=9, m=9. B3LYP/6-31G* level of theory have been used to determine and compare electronic properties, n...

adsorption of nh3 and h2o molecules on pristine and b–doped al12n12 nano–cage was investigated using density functional theory, by means of b3lyp and x3lyp functionals. both nh3 and h2o molecules were found to bind to an al atom of al12n12 via chemisorption, releasing energies ranging from –1.48 to –1.53 and –1.16 to –1.22 ev, respectively. the binding energies of x3lyp functional are somewhat ...

CA91 108 We report on resistivity and chemical stability of Cr/Au bilayers deposited by sputtering on three kinds of substrates: alumina, aluminum nitride and aluminum nitride coated alumina. The insertion loss of Cr/Au microstrip lines fabricated on these three substrates was low and stable after 700 cycles in the -65°C to 125°C temperature range.

In this paper, the structure of SAW has been studied. In previous work in SAW, materials such as lithium niobium, lithium tantalite and gallium nitride were used in the structure of SAW, and thus had a low operating frequency and the highest reported operating frequency was about 4 GHz. In this paper, aluminum nitride and gallium nitride in the SAW structure are used in combination. The electro...

The response to different force load ranges and actuation at low energies is of considerable interest for applications of compliant and flexible devices undergoing large deformations. We present a review of technological platforms based on nitride materials (aluminum nitride and silicon nitride) for the microfabrication of a class of flexible micro-electro-mechanical systems. The approach explo...

Temperature Compensation of Aluminum Nitride Lamb Wave Resonators Utilizing the Lowest-Order Symmetric Mode

In this article the effects of process parameters of CHF31N2 plasma etching chemistry ~rf power 50–70 W, pressure 22.5–52.5 mTorr, and N2 content 0%–95%! and mask materials ~photoresist, aluminum, and silicon nitride! on the etching selectivity of silicon nitride over polysilicon are investigated. It was found that the selectivity increased with the N2 content in the range of 0%–85% and then de...