Compressively strained InSb structures aimed for p-channel heterostructure field effect transistors (HFETs) are analysed in order to maximise their hole mobility. We optimise the heterostructure by the change of the material composition, thickness of the layers and position of δ-doping. The splitting of light and heavy hole bands in compressively strained channels are calculated by nextnano sof...

nextnano is a simulation tool that aims at providing global insight into the basic physical properties of realistic three-dimensional mesoscopic semiconductor structures. It focuses on quantum mechanical properties such as the global electronic structure, optical properties, and the effects of electric and magnetic fields for virtually any geometry and combination of semiconducting materials. F...

in order to implement an integrated optical quantum circuit, designing waveguides based on the quantum box is of prime importance. to do this we have investigated optical waveguide both with and without optical pumping. the rate of absorption and emission using an array of algaas/gaas quantum box core/shell structure in the optical waveguide with various pumping intensities has computed. by con...

Potential barriers around quantum dots (QDs) play a key role in kinetics of photoelectrons. These barriers are always created, when electrons from dopants outside QDs fill the dots. Potential barriers suppress the capture processes of photoelectrons and increase the photoresponse. To directly investigate the effect of potential barriers on photoelectron kinetics, we fabricated several QD struct...

Here, we study a simulation model of In0.17Al0.83N/GaN passivated high electron mobility transistors (HEMTs) on SiC substrate. The research focused systematically the effet AlN interlayer electronic and electric characteristics using Nextnano software. 2D–electron gas density In0.17Al0.83N/AlN/GaN HEMTs is investigated through dependence various layer thickness, report calculations I-V characte...

The progress of charge manipulation in semiconductor-based nanoscale devices opened up a novel route to realise flying qubit with single electron. In the present review, we introduce concept these electron qubits, discuss their most promising realisations and show how numerical simulations are applicable accelerate experimental development cycles. Addressing technological challenges qubits that...

In order to implement an integrated optical quantum circuit, designing waveguides based on the quantum box is of prime importance. To do this we have investigated optical waveguide both with and without optical pumping. The rate of absorption and emission using an array of AlGaAs/GaAs quantum box core/shell structure in the optical waveguide with various pumping intensities has computed. By con...

In order to implement an integrated optical quantum circuit, designing waveguides based on the quantum box is of prime importance. To do this we have investigated optical waveguide both with and without optical pumping. The rate of absorption and emission using an array of AlGaAs/GaAs quantum box core/shell structure in the optical waveguide with various pumping intensities has computed. By con...

Abstract InGaAs/GaAsSb type-II superlattice (T2SL) photodiodes grown on InP substrates are an alternative detector technology for applications operating in the short wavelength infrared band. Their cut-off wavelengths heavily influenced by thickness and material composition of InGaAs GaAsSb used T2SL. We present a single band k.p. model performed using finite difference approach nextnano valida...