نتایج جستجو برای: Negative Differential Resistance (NDR)

تعداد نتایج: 1150770  

Journal: :IEEE Transactions on Microwave Theory and Techniques 1993

Journal: :international journal of nano dimension 0
seyed ali sedigh ziabari department of electrical engineering, rasht branch, islamic azad university, rasht, iran mohammad javad tavakoli saravani department of electrical engineering, mehrastan institute of higher education, astaneh ashrafieh, iran

in this paper, we propose and evaluate a novel design of a lightly doped drain and source carbon nanotube field effect transistor (ldds-cntfet) with a negative differential resistance (ndr) characteristic, called negative differential resistance ldds-cntfet (ndr-ldds-cntfet). the device was simulated by using a non equilibrium green’s function method. to achieve this phenomenon, we have created...

In this paper, we propose and evaluate a novel design of a lightly doped drain and source carbon nanotube field effect transistor (LDDS-CNTFET) with a negative differential resistance (NDR) characteristic, called negative differential resistance LDDS-CNTFET (NDR-LDDS-CNTFET). The device was simulated by using a non equilibrium Green’s function method. To achieve this phenomenon, we have created...

In this paper, we propose and evaluate a novel design of a lightly doped drain and source carbon nanotube field effect transistor (LDDS-CNTFET) with a negative differential resistance (NDR) characteristic, called negative differential resistance LDDS-CNTFET (NDR-LDDS-CNTFET). The device was simulated by using a non equilibrium Green’s function method. To achieve this phenomenon, we have created...

Journal: :Nano letters 2009
S W Lee A Kornblit D Lopez S V Rotkin A A Sirenko H Grebel

Intraconnects, as-grown single-walled carbon nanotubes bridging two metal electrodes, were investigated as gated structures. We show that even with a seemingly "ohmic" contact at zero gate voltage one observes negative differential resistance (NDR) at nonzero gate bias. Large differential photo conductance (DPC) was associated with the NDR effect raising hopes for the fabrication of novel high-...

2006
Cher-Shiung Tsai Chung-Chih Hsiao Kwang-Jow Gan Jia-Ming Wu Ming-Yi Hsieh Chun-Chieh Liao Shih-Yu Wang Feng-Chang Chiang Chia-Hung Chen Dong-Shong Liang Yaw-Hwang Chen

First, we create a MOS-NDR (negative differential resistance) cell and then put two MOS-NDR cells in cascode (totem-pole) structure. With MOBILE (monostable-bistable transition logic element) theorem we can built a MOS-NDR inverter by placing a NMOS in parallel with the lower part of the cascode structure. The MOS-NDR inverter cascades two Common-Source amplifier and feedback to MOS-NDR inverte...

Journal: :Journal of the American Chemical Society 2005
Jin He Stuart M Lindsay

Negative differential resistance (NDR) peaks in the current-voltage characteristics of ferrocenylundecanethiol self-assembled monolayers are not reversible. The peaks turn to smoothly increasing currents as oxygen is removed from the system, indicating that NDR arises from the reaction of an energetic charged species with ambient oxygen.

Journal: :Journal of the American Chemical Society 2006
Rui Liu San-Huang Ke Harold U Baranger Weitao Yang

Analogous to a quantum double-dot system, diblock structured molecules could also show negative differential resistance (NDR). Using combined density functional theory and nonequilibrium Green function technique, we show that molecular-level crossing in a molecular double-dot system containing cobaltocene and ferrocene leads to NDR and hysteresis.

2010
Yang Zhang Ching-Ting Lee

The electrical transport through nanoscale contacts of ZnO nanowires bridging the interdigitated Au electrodes shows the negative differential resistance (NDR) effect. The NDR peaks strongly depend on the starting sweep voltage. The origin of NDR through nanoscale contacts between ZnO nanowires and metal electrodes is the electron charging and discharging of the parasitic capacitor due to the w...

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