the performance of nanoscale field effect diodes as a function of the spacer length between two gates is investigated. our numerical results show that the ion/ioff ratio which is a significant parameter in digital application can be varied from 101 to 104 for s-fed as the spacer length between two gates increases whereas this ratio is approximately constant for m-fed. the high-frequency perform...

A model transistor is de ned and used to understand steady-state electron transport in nanoscale silicon transistors. For this model device, the electric eld pro le is xed and not computed self-consistently from the carrier density pro le. The current versus voltage (I-V) characteristics of the model device as well as the internal carrier density and velocity pro les are computed by solving the...

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