In this paper we develop a numerical procedure using finite element and augmented Lagrangian meth-ods that simulates electro-mechanical pull-in states of both cantilever and fixed beams in microelectromechanical systems (MEMS) switches. We devise the augmented Lagrangian methods for the well-known Euler-Bernoulli beam equation which also takes into consideration of the fringing effect of electr...

MicroElectroMechanical Systems (MEMS) are becoming increasingly important. The benefits of MEMS include small size, low weight, and low cost. In addition, Radio Frequency MEMS switches offer low insertion loss, high quality factor, low power, high isolation, and broadband frequency performance. Modeling of electrostatically-actuated, capacitive switches is reviewed and fabrication steps are des...

RF-MEMS technology has the potential of replacing many of the mechanical and semiconductor switches used in mobile and satellite communication systems. In many cases, such RF-MEMS switches would not only reduce substantially the size and power consumption, but also promise superior performance. The paper reviews the recent development of RF MEMS switches and switch matrices. Several configurati...

RF MEMS capacitive switches capable of orderof-magnitude impedance changes have demonstrated operating lifetimes exceeding 100 billion switching cycles without failure. In situ monitoring of switch characteristics demonstrates no significant degradation in performance and quantifies the charging properties of the switch silicon dioxide film. This demonstration leads credence to the mechanical r...

An overview of the MEMS technology development and applications is given in this paper. A special attention is paid to the RF MEMS switches. Both series and shunt MEMS switches have been considered. It is also presented a technique for modeling and design of inductively-tuned MEMS shunt switch. Some very important issues for the device maturity e.g. reliability and packaging have been addressed.

This paper presents the design of a V-band switched-line phase shifter using SP4T RF-MEMS switches. Sonnet simulations are used to achieve accurate circuit models of both the RF-MEMS switches as well as CPW bends within the phase shifter. The V-band phase shifter utilizes two SP4T RF-MEMS switches to perform the delay line switching. The RF performance of the SP4T MEMS switch is optimized to ad...

In this paper a new design for 6 bit DMTL phase shifter with only 32 MEMS switches is proposed. The reduction in number of switches in ordinary 6 bit phase shifter from 63 to 32 is due to combination of one 5.625 degree for least significant bit and 11.25 degree for the rest of the switches. Decreasing the number of the switches reduces the die-size as well as loss of the CPW line. Analytical s...

Problem statement: In this study Microelectrical Mechanical System (MEMS) switches were proposed to design a reconfigurable/multi-band antenna to replaced PIN diode switches or semiconductor switches due to lower insertion losses, good isolation, much lower intermodulation distortion, and lower power consumption. The antenna is able to operate at very high frequencies. Approach: A reconfigurabl...

Two-dimensional (2-D) microelectromechanical system (MEMS) optical switches have the merits of easy fabrication and high reliability. Since the optical signal loss is mainly proportional to the length of signaling paths in the switches, current 2-D MEMS optical switches that use a crossbar structure have a rather limited number of ports. For larger 2-D MEMS optical switches, we may use nonrecta...