excess pore pressure under seismic loadings has always been a main concern in geotechnical engineering practices. the phenomenon in soil can cause an effective stress and hence cause the shear strength of the soil to decrease considerably and large deformations to occur in the area. generally, increases in pore pressure occur in un-drained conditions. if it is formed, its consequences decrease ...

excess pore pressure under seismic loadings has always been a main concern in geotechnical engineering practices. the phenomenon in soil can cause an effective stress and hence cause the shear strength of the soil to decrease considerably and large deformations to occur in the area. generally, increases in pore pressure occur in un-drained conditions. if it is formed, its consequences decrease ...

An analytic solution is presented describing ̄ow to a drain in a semi-in®nite domain bounded by a leaky layer of constant thickness. The solution is developed by applying the method of images to two parallel boundaries: an inhomogeneity boundary and an equipotential boundary. It is then demonstrated that the solution for the problem with the leaky layer approximated by a leaky boundary (a mixed...

Carrier scatterings in the inversion channel of MOSFET dominates the carrier mobility and hence drain current. This paper presents an analytical model of the subthreshold drain current incorporating the effective electron mobility model of the pocket implanted nano scale n-MOSFET. The model is developed by assuming two linear pocket profiles at the source and drain edges at the surface and by u...

Pakistani doctors (MBBS) are emigrating towards developed countries for professional adjustments. This study aims to highlight causes and consequences of doctors’ brain drain from Pakistan. Primary data was collected from Mayo Hospital, Lahore by interviewing doctors (n=100) through systematic random sampling technique. It found that various socio-economic and political conditions are working a...

In this paper, an analytical modeling is presentated to describe the channel noise in GME SGT/CGT MOSFET, based on explicit functions of MOSFETs geometry and biasing conditions for all channel length down to deep submicron and is verified with the experimental data. Results shows the impact of various parameters such as gate bias, drain bias, channel length ,device diameter and gate material wo...

Excess pore pressure under seismic loadings has always been a main concern in geotechnical engineering practices. The phenomenon in soil can cause an effective stress and hence cause the shear strength of the soil to decrease considerably and large deformations to occur in the area. Generally, increases in pore pressure occur in un-drained conditions. If it is formed, its consequences decrease ...

This paper presents the derivations of the voltage transfer functions of the amplifier A, the feedback network β, and the loop gain T of the common-drain (CD) Colpitts oscillator, using the small-signal model of the CD Colpitts oscillator. The derivation of the characteristic equation of the CD Colpitts oscillator is presented. Using the characteristic equation, the equation for the oscillation...

This work offers a study of new simple compact model of dual-drain Magnetic Field Effect Transistor (MAGFET) including geometrical effects and biasing dependency. An explanation of the sensitivity is investigated, involving carrier deflection as the dominant operating principle. Finally, model verification with simulation results is introduced to ensure that acceptable error of 2% is achieved. ...