In this paper, we propose a new heterostructure dual material gate junctionless field-effect transistor (H-DMG-JLFET), with negative differential resistance (NDR) characteristic. The drain and channel material are silicon and source material is germanium. The gate electrode near the source is larger. A dual gate material technique is used to achieve upward band bending in order to access n-i-p-...

The lateral band-to-band tunneling (L-BTBT) leakage mechanism increases the OFF state current and prevents junctionless transistor from scaling. effect of L-BTBT on FIN shaped gate Junctionless field transistor(JLFET) with ground plane (GP) in oxide has been investigated. proposed device is simulated using 3-D Silvaco TCAD shows that it can mitigate leads to efficient volume depletion which rel...

In this paper review study on different types of Junctionless transistor is promoted. Here a comparative study of SOI, bulk planar, double gate and tunnel Junctionless field effect transistor. It is observed Junctionless transistor exhibits better short channel effects and ON current then inversion mode device. Tunnel Junctionless transistor exhibits the properties of both tunnel FET and Juncti...

In this article, the particle irradiation effect of a lightly doped Gaussian source heterostructure junctionless tunnel field-effect transistor (DMG-GDS-HJLTFET) is discussed. phenomenon, heavy ion produces series electron-hole pairs along incident track, and then generated transient current can overturn logical state device when number large enough. single-particle DMG-GDS-HJLTFET, carried ene...

The junctionless nanowire transistor is a promising alternative for a new generation of nanotransistors. In this letter the atomic force microscopy nanolithography with two wet etching processes was implemented to fabricate simple structures as double gate and single gate junctionless silicon nanowire transistor on low doped p-type silicon-on-insulator wafer. The etching process was developed a...

A comparative evaluation of channel hot carrier (CHC) reliability and pursuance dopingless FET (DL JLFET) junctionless (JLFET) are studied for various dielectrics compared with conventional dielectric (SiO2) JLFET. The use such as vacuum near the drain high-κ (HfO2) source in DL JLFET (VacuHDL allows better against effects. simulation study has shown that VacuHDL terms Ion/Ioff ratio is improve...

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This paper analyzes the design space stability of negative capacitance double gate junctionless FETs (NCDG JLFET). Using analytical expressions derived from a charge-based model, we predict instability condition, hysteresis voltage, and critical thickness ferroelectric layers giving rise to behavior. The impact technological parameters is investigated in order ensure hysteresis-free operation. ...

In this paper, we propose and validate a Heterogate DielectricDual Material Gate-Gate All Around, Tunnel Field Effect Transistor (HD-DMG-GAA-TFET). A comparative study for different values of high-k has been done, and it has been clearly shown that the problem of lower ION (which hinders the circuit performance of TFET) can be overcome by using the dielectric engineered hetero-gate architecture...