نتایج جستجو برای: Ion beam sputtering

تعداد نتایج: 313044  

Journal: :Analytical chemistry 2008
Bang-Ying Yu Ying-Yu Chen Wei-Ben Wang Mao-Feng Hsu Shu-Ping Tsai Wei-Chun Lin Yu-Chin Lin Jwo-Huei Jou Chih-Wei Chu Jing-Jong Shyue

By sputtering organic films with 10 kV, 10 nA C60+ and 0.2 kV, 300 nA Ar+ ion beams concurrently and analyzing the newly exposed surface with X-ray photoelectron spectroscopy, organic thin-film devices including an organic light-emitting diode and a polymer solar cell with an inverted structure are profiled. The chemical composition and the structure of each layer are preserved and clearly obse...

2004
J. P. Allain D. N. Ruzic

Absolute sputtering yields of liquid tin from 240 to 420 C due to irradiation by low-energy helium and deuterium have been measured. For ion energies ranging from 300 to 1000 eV, temperature enhancement of liquid tin sputtering was noted. These measurements were obtained by IIAX (the Ion-surface InterAction eXperiment) using a velocityfiltered ion beam at 45 incidence to sputter material from a...

2011
V. O. Kharchenko D. O. Kharchenko

It is well known that low and medium energy ion sputtering may induce a fabrication of periodic nanoscale structures on an irradiated surface [1]. Depending on the sputtered substrate characteristics and sputtering conditions, different types of nanoscale structures such as ripples, nanoholes and nanodots can grow on a target during ion beam sputtering [2–6]. These patterns have been found on b...

Journal: :The Review of scientific instruments 2011
Georg Eder Stefan Schlögl Klaus Macknapp Wolfgang M Heckl Markus Lackinger

We describe the setup, characteristics, and application of an in vacuo ion-sputtering and electron-beam annealing device for the postpreparation of scanning probes (e.g., scanning tunneling microscopy (STM) tips) under ultrahigh vacuum (UHV) conditions. The proposed device facilitates the straightforward implementation of a common two-step cleaning procedure, where the first step consists of io...

2003
M. D. Coventry J. P. Allain D. N. Ruzic

Absolute sputtering yields of Sn in the solid and liquid phases for incident Hþ, Dþ, and Heþ ions with energies of 300 to 1000 eV were determined via a series of experiments using the ion-surface interaction experiment (IIAX), a facility designed to measure such ion-surface interactions. IIAX incorporates an ion source with an array of ion beam filters and optics to bring a near mono-energetic ...

2017
Ivan Shorubalko Kyoungjun Choi Michael Stiefel Hyung Gyu Park

Recent years have seen a great potential of the focused ion beam (FIB) technology for the nanometer-scale patterning of a freestanding two-dimensional (2D) layer. Experimentally determined sputtering yields of the perforation process can be quantitatively explained using the binary collision theory. The main peculiarity of the interaction between the ion beams and the suspended 2D material lies...

Journal: :Journal of Vacuum Science and Technology 1979

2004
Maxim A. Makeev

Off-normal ion bombardment of solid targets with energetic particles often leads to development of periodically modulated structures on the surfaces of eroded materials. Ion-induced surface roughening, in its turn, causes sputtering yield changes. We report on a comprehensive theoretical study of the effect of rippled surface morphology on the sputtering yields. The yield is computed as a funct...

2015
Daniel G. Courtney Herbert Shea

Articles you may be interested in Influence of ion source configuration and its operation parameters on the target sputtering and implantation process Rev. Multiply charged ion-induced secondary electron emission from metals relevant for laser ion source beam diagnostics Rev.

2008

The Target Group has recently begun to apply ion beam sputter deposition for target pusher layer fabrication. Metal deposition on both levitated and stalk-mounted fusion targets has been demonstrated. We believe this is the first application of this versatile deposition technique to IF target pusher layerfabrication. Our initial results indicate that ion beam sputtering is far more controllable...

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