نتایج جستجو برای: Inverse E Power Amplifier
تعداد نتایج: 1571597 فیلتر نتایج به سال:
In this paper, we have presented an X band high power amplifier based on MMIC (Monolithic Microwave Integrated Circuit) technology for satellite remote sensing systems. We have used GaN HEMT process with 500 nm gate length technology with VD= 40 V and VG= -2 V in class E structure. The proposed two-stage power amplifier provides 25 dB power gain with maximum output power of 49.3 dBm at 10 GHz. ...
Abstract This paper proposes the use of an inverse class-E amplifier with a tunable parallel resonator at the output port in order to obtain a high power-added efficiency (PAE) and output power in a wide frequency range. The tunable resonator circuit has a constant Q factor in the operating frequency range, and since the circuit has a varactor diode, the inductor and capacitor values of the res...
This paper presents a 30dBm (1W) class-E power amplifier projected in a standard 0.18-μm CMOS technology. The power amplifier (PA) consists in two differentials stages. The main stage employs a cascode class-E RF power amplifier with a self-biasing circuit. The driver stage uses the technique of Injection-Locking to substantially reduce the input power signal, maintaining a high gain. At 2.45 G...
Analysis and simulation are presented of the mismatched load condition for a balanced class-E power amplifier, which is based on 90° hybrids at its input and output. The performances of the 200-Watt balanced class-E amplifier, such as the output power and efficiency, were analyzed and compared to the conventional single-ended class-E power amplifier for the 1:3 VSWR mismatch condition. The simu...
a digital look-up table adaptive predistortion technique using a six-port receiver for power amplifier linearization is presented. the system is designed in ka-band for a dvb-s2 satellite link. we use a six-port receiver at the linearizationloop in place of classic heterodyne receivers. the six-port receiver is implemented by the use of passive microwavecircuits and detector diodes. this approa...
Background and Objectives: In this paper, a new design strategy was proposed in order to enhance bandwidth and efficiency of power amplifier. Methods: To realize the introduced design strategy, a power amplifier was designed using TSMC CMOS 0.18um technology for operating in the Ka band, i.e. the frequency range of 26.5-40GHz. To design the power amplifier, first a power divider (PD) with a ver...
a new output structure for class e power amplifier (pa) is proposed in this paper. a series lc resonator circuit, tuned near the second harmonic of the operating frequency is added to the output circuit. this resonator causes low impedance at the second harmonic. the output circuit is designed to shape the switch voltage of the class e amplifier and lower the voltage stress of the transistor. t...
The Class-E power amplifier is widely used due to its high efficiency, resulting from switching at zero voltage and zero slope of the switch voltage. In this paper, we extend general analytical solutions for the Class-E power amplifier to the ideal single-ended Variable-Voltage Class-E (Class-Evv) power amplifier that switches at zero slope but not necessarily at zero voltage. The theory is ver...
This paper analyzes maximum output power of class E amplifier with arbitrary transistor. It is important to estimate maximum output power of class E amplifier when a specification of transistor is given. In this paper, values of circuit parameters that gives maximum output power for given operating frequency, dc supply voltage, and output capacitance of the transistor are calculated. This paper...
the graphical technique for nonlinear circuits was described that enable us to optimize circuits to obtain maximum output power, maximum efficiency or minimum intermodulation. according to this method a high power amplifier in the ka band was designed. using a nonlinear model of the transistor, optimum slope for load-line was determined so that maximum power at the output was obtainable, then ...
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