نتایج جستجو برای: InP materials

تعداد نتایج: 439988  

Journal: :journal of optoelectronical nano structures 0
mahmoud nikoufard university of kashan masoud kazemi alamouti university of kashan

in this article, we suggested a novel design of polarization splitter based on coupler waveguide on inp substrate at 1.55mm wavelength. photonic crystal structure is consisted of two dimensional (2d) air holes embedded in inp/ingaasp material with an effective refractive index of 3.2634 which is arranged in a hexagonal lattice. the photonic band gap (pbg) of this structure is determined using t...

2016
Christopher M. Collier Trevor J. Stirling Ilija R. Hristovski Jeffrey D. A. Krupa Jonathan F. Holzman

Photoconductive (PC) terahertz (THz) emitters are often limited by ohmic loss and Joule heating-as these effects can lead to thermal runaway and premature device breakdown. To address this, the proposed work introduces PC THz emitters based on textured InP materials. The enhanced surface recombination and decreased charge-carrier lifetimes of the textured InP materials reduce residual photocurr...

2012
Greta R. Patzke Roman Kontic Zeinab Shiolashvili Nino Makhatadze David Jishiashvili

Indium phosphide nanowires (InP NWs) are accessible at 440 °C from a novel vapor phase deposition approach from crystalline InP sources in hydrazine atmospheres containing 3 mol % H₂O. Uniform zinc blende (ZB) InP NWs with diameters around 20 nm and lengths up to several tens of micrometers are preferably deposited on Si substrates. InP particle sizes further increase with the deposition temper...

2003
A. Fontcuberta i Morral J. M. Zahler Harry A. Atwater Thomas J. Watson M. W. Wanlass

Hydrogen-induced exfoliation combined with wafer bonding has been used to transfer ;600-nm-thick films of ~100! InP to Si substrates. Cross-section transmission electron microscopy ~TEM! shows a transferred crystalline InP layer with no observable defects in the region near the bonded interface and an intimately bonded interface. InP and Si are covalently bonded as inferred by the fact that InP...

1999
T. Chassé A. Kahn

We present a photoemission study of the electronic properties of organic-inorganic semiconductor heterojunctions formed between the two hole transport materials, N,N8-diphenyl-N, N8-bis~1-naphthyl!-1-18biphenyl-4,49diamine ~a-NPD! and copper-phthalocyanine ~CuPc!, and InP~110!. The highest occupied molecular orbital of a-NPD ~CuPc! is found to be 0.2 eV below ~0.2 eV above! the InP valence band...

Objective(s): Injectable insulin is the most widely used therapy in patients with type 1 diabetes which has several disadvantages. The present study was aimed to evaluate the efficacy of injectable insulin on diabetes mellitus-related complications in comparison to orally encapsulated insulin nanoparticles.Materials and Methods: This stu...

Journal: :Nano letters 2015
Kun Li Kar Wei Ng Thai-Truong D Tran Hao Sun Fanglu Lu Connie J Chang-Hasnain

The direct growth of III-V nanostructures on silicon has shown great promise in the integration of optoelectronics with silicon-based technologies. Our previous work showed that scaling up nanostructures to microsize while maintaining high quality heterogeneous integration opens a pathway toward a complete photonic integrated circuit and high-efficiency cost-effective solar cells. In this paper...

Journal: :the modares journal of electrical engineering 2006
kamyar - saghafi mohammad kazeme moravvej-farshi vahid ahmadi

in this paper, we examine the effect of the energy difference between the l- and the -valleys in compound semiconductor materials, carrier effective mass, and the scattering processes on the electron transport characteristics in mesfets. to do this, we use the monte carlo simulation to demonstrate the superiority of the ingaas mesfet, made on a semi-insulating inp substrate, over both inp and ...

Journal: :The journal of physical chemistry letters 2015
Mark Hettick Maxwell Zheng Yongjing Lin Carolin M Sutter-Fella Joel W Ager Ali Javey

To date, some of the highest performance photocathodes of a photoelectrochemical (PEC) cell have been shown with single-crystalline p-type InP wafers, exhibiting half-cell solar-to-hydrogen conversion efficiencies of over 14%. However, the high cost of single-crystalline InP wafers may present a challenge for future large-scale industrial deployment. Analogous to solar cells, a thin-film approa...

2003

The growth and structural properties of self-assembled InP quantum dots are presented and discussed, together with their optical properties and associated carrier dynamics. The QDs are grown using gas-source molecular-beam epitaxy in and on the two materials In0.48Ga0.52P (lattice matched to GaAs) and GaP. Under the proper growth conditions, formation of InP dots via the StranskiKrastanow mecha...

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