In this article, we suggested a novel design of polarization splitter based on coupler waveguide on InP substrate at 1.55mm wavelength. Photonic crystal structure is consisted of two dimensional (2D) air holes embedded in InP/InGaAsP material with an effective refractive index of 3.2634 which is arranged in a hexagonal lattice. The photonic band gap (PBG) of this structure is determined using t...

in this article, we suggested a novel design of polarization splitter based on coupler waveguide on inp substrate at 1.55mm wavelength. photonic crystal structure is consisted of two dimensional (2d) air holes embedded in inp/ingaasp material with an effective refractive index of 3.2634 which is arranged in a hexagonal lattice. the photonic band gap (pbg) of this structure is determined using t...

The need for higher performance electronics for space and defense applications has driven the development of InP heterojunction technologies. For the past 10 years, TRW has been developing InP HBT and HEMT technologies for mission critical applications [1– 3]. Consistent and continuous improvements in the basic MBE structure and process technology have enhanced device and circuit performance, p...

Due to its direct band gap of ~1.35 eV, appropriate energy band-edge positions, and low surface-recombination velocity, p-type InP has attracted considerable attention as a promising photocathode material for solar hydrogen generation. However, challenges remain with p-type InP for achieving high and stable photoelectrochemical (PEC) performances. Here, we demonstrate that surface modifications...

This paper presents a study on the effect of matrix material on the morphology and optical properties of self-assembled InP-based InAsSb nanostructures. Due to the differences in surface roughness of the growth front, In0.53Ga0.47As matrix layer induces the formation of short quantum dashes QDashes and elongated quantum dots, while InP and In0.52Al0.48As matrix layers promote the formation of l...

The conditions under which the band gaps of free standing and embedded semiconductor quantum dots are direct or indirect are discussed. Semiconductor quantum dots are classified into three categories; (i) free standing dots, (ii) dots embedded in a direct gap matrix, and (iii) dots embedded in an indirect gap matrix. For each category, qualitative predictions are first discussed, followed by th...

The electrical characteristics of InP/In0.24Ga0.76As0.73Sb0.27/In0.53Ga0.47As double heterojunction bipolar transistor (DHBT) are investigated. The study is based on energy balance (EB) transport model and TCAD SILVACO device simulator. InP/In0.24Ga0.76As0.73Sb0.27 DHBT have a low Emitter-Base conduction band discontinuity EC and a minimum base bandgap energy EG among the entire composition ran...

The coefficient of thermal expansion (CTE) and the thermal conductivity are the two key parameters to consider when selecting a particular substrate material for a die bonding process. We will discuss here a model to determine the substrate material giving the best chip reliability expectations for GaAs and InP laser chips. In that respect, a comparison of the thermo-mechanical stresses induced...

We demonstrate vertically and laterally scaled GaAsSb/InP type-II DHBTs with fT = 670 GHz at 10.3 mA/μm emitter current density and off-state collector-emitter breakdown voltage BVCEO = 3.2 V. Small-signal modeling is used to extract delay terms and to identify material design and device fabrication requirements for next-generation devices with > 1 THz cutoff frequencies. INTRODUCTION InP based...

Although InP/GaAs0.51Sb0.49/InP DHBT has recently attracted much interest, some sensitive material parameters are still uncertain. We detailed the simulation methodology used to evaluate bandgap energy, minority carrier lifetime and band gap narrowing effect. Moreover, the high-injection effect is analysed as resulting from electron parasitic barrier formation at base-collector junction.