The most commonly used method for the production of thin films is based on deposition of atoms or molecules onto a solid surface. One of the suitable method is to produce high quality metallic, semiconductor and organic thin film is Ionized cluster beam deposition (ICBD), which are used in electronic, robotic, optical, optoelectronic devices. Many important factors such as cluster size, cluster...

Surface modification of Si(100) wafers induced by argon-ion implantation (ion energy, 300keV; dose, 10" 10'' atoms/cm2) was investigated using a transient reflecting grating technique. Effects of the implantation on velocity, intensity and onset time of surface acoustic waves (SAW) were discussed accompanying the acoustic anisotropy. SAW velocity dispersion was also examined for one of the ligh...

The Auger electron spectroscopy method confirmed a high concentration of carbon atoms (~ 85 at.%) introduced into silicon by cold implantation recoil atoms. Carbon are concentrated in thin 5 nm) near-surface region silicon. Annealing such structure did not reveal noticeable diffusion carbon, which prevents obtaining layer SiC with thickness more than few nm. This problem was solved using radiat...

On the atomic scale, Molecular Dynamic (MD) Simulation of Nano Al cluster impact on Al (100) substrate surface has been carried out for energies of 1-20 eV/atom to understand quantitatively the interaction mechanisms between the cluster atoms and the substrate atoms. The many body Embedded Atom Method (EAM) was used in this simulation. We investigated the maximum substrate temperature Tmax  and...

Atomic scale details of the formation point defects and their evolution to phase transformation in silicon (Si) implanted β-Ga2O3 were studied using high resolution scanning transmission electron microscopy (STEM). The effect Si implantation was as a function dose atoms, detailed mechanism lattice recovery observed both situ ex annealing β-Ga2O3. created nanoscale dark spots STEM images, which ...

Damage from ion implantation in Si can lead to dislocation formation during subsequent thermal annealing. These dislocations may sharply degrade device performance, making it desireable to suppress their formation. In this paper the criterion for dislocation formation is reviewed. Knowing this criterion suggests several ways to avoid dislocation formation in high dose implants for device applic...

Here we present a simple physical method to prepare magnetic nanodiamonds (NDs) using high dose Fe ion-implantation. The Fe atoms are embedded into NDs through Fe ion-implantation and the crystal structure of NDs are recovered by thermal annealing. The results of TEM and Raman examinations indicated the crystal structure of the Fe implanted NDs is recovered completely. The SQUID-VSM measurement...

UNLABELLED We present a comparative study of thermal donor (TD) center formation mechanisms as a result of carbon ion implantation into float zone (FZ-Si) and Czochralski (Cz-Si) silicon crystals. The kinetics of the TD center formation and transformation of their structure during annealing have been investigated. Also, the TD center formation takes place after additional oxygen implantation in...

Changes in electrical as well as surface composition such as chemical and electronic properties of Mg-doped p-type GaN by phosphorus implanting are systematically investigated using Hall effect and X-ray photoelectron spectroscopy (XPS) measurements. It is shown that p-type conductivity of Mg-doped GaN can be improved by implanting P atoms after a proper post-implantation annealing treatment, p...