The binding energies of shallow hydrogenic impurity in a GaAs/GaAlAs quantum dot with spherical confinement, harmonic oscillator-like and rectangular well-like potentials are calculated as a function of dot radius using a variational procedure within the effective mass approximation. The calculations of the binding energy of the donor impurity as a function of the system geometry have been inve...

in this research, the effect of the first order magnetic field on the ground-state of a centered hydrogenic donor impurity in a gaas/alas spherical quantum dot has been calculated. the perturbation method has been used within the framework of effective mass approximation for these calculations. overall, the analysis shows that a proper choice of quantum dot radius and magnetic field can signifi...

We propose a method for uniformly calculating the electronic states of a hydrogenic donor impurity in low-dimensional semiconductor nanostructures in the framework of effective-mass envelope-function theory, and we study the electronic structures of this systems. Compared to previous methods, our method has the following merits: (a) It can be widely applied in the calculation of the electronic ...

The binding energy of ground state for hydrogenic impurity in multiple quantum dots is calculated in the framework of effective-mass approximation and using a variational method. It is shown that the binding energy is a function of the size of dots, impurity position and external fields strength. The binding energy has a maximum value when the impurity is located on the center of dots and decre...

Calculations of the binding energy of an on-center and off-center shallow hydrogenic impurity in a GaAs quantum dot under hydrostatic pressure are presented. The variational approach within the effective mass approximation is used as the framework for this calculation. The effect of the pressure is to exert an additional confinement on the impurity inside the dot; therefore the binding energy i...

The binding energies as well as wave functions of hydrogenic impurities located in V-groove GaAs/AlxGa1−xAs quantum wires are calculated for different positions of the impurity inside the wires. The variational method is used and the carrier ground states are analytically calculated by an effective potential scheme together with a suitable coordinate transformation that allows the decoupling of...

Based on a hydrogenic state and strain changes upon defect charging, we propose a simple, parameter-free model that agrees well with the observed group III and V monovalent-impurity ionization energies in Si, revealing the importance of such strain effects. Changes in lattice strain upon defect charging are obtained via superposition and elasticity theory using atomic relaxations from density f...

The Rashba spin-orbit splitting of a hydrogenic donor impurity in GaAs/GaAlAs quantum wells is investigated theoretically in the framework of effective-mass envelope function theory. The Rashba effect near the interface between GaAs and GaAlAs is assumed to be a linear relation with the distance from the quantum well side. We find that the splitting energy of the excited state is larger and les...