Ge:Sb films with thickness (500nm) have been deposited by thermal evaporation technique on glass substrate and c-GaAs wafer at room temperature, under vacuum of 10-5 mbar with rate of deposition equal to 10Ǻ/sec. These films have been annealed at different annealing temperatures (100, 200) 0 C. The structural characteristic of the films prepared on glass and GaAs substrates have been studied by...

This study reports the fabrication of n-TiO2/p-Si hetrojunction by deposition of TiO2nanowires on p-Si substrate. The effect of system pressure and the current-voltage (I-V) characteristics of n-TiO2/p-si hetrojunction were studied. The morphology of the samples was investigated by Field Emission Scanning Electron Microscopy (FESEM) which confirms formation of T...

In last several decades silicon-germanium (SiGe) technology has come into the global electronics marketplace. Commercial SiGe HBT facilitates transceiver designs and recommends transistor-level performance metrics which are competitive with the best III-V technologies (InP or GaAs), while sustaining strict fabrication compatibility with high yielding, low-cost, Si CMOS foundry processes on larg...

this study reports the fabrication of n-tio2/p-si hetrojunction by deposition of tio2nanowires on p-si substrate. the effect of system pressure and the current-voltage (i-v) characteristics of n-tio2/p-si hetrojunction were studied. the morphology of the samples was investigated by field emission scanning electron microscopy (fesem) which confirms formation of tio2 nanowires that their diameter...

A number of approaches have been developed to synthesize the CuInSe2 and CuInGaSe2 based thin film solar cells [1-6]. Due to large numbers of parameters involve in processing a solar cell such as the energy band gap of the back surface field, thickness of the emitter, interface density etc. It is a difficult task to scrutinize and control the effect of each variable on the performance of the so...

The immense demand for communication systems worldwide has created an enormous market for semiconductors devices (SiGe HBTs) in variegated applications. Nowadays SiGe HBTs are surpassing even the fastest III-V production devices in the GHz speed orbit. Scaling has been the prime source of supremacy behind the successful technology innovations. The design and optimization of un-scaled and scaled...