نتایج جستجو برای: Graphene Nanoribbon (GNR)
تعداد نتایج: 50945 فیلتر نتایج به سال:
Graphene has recently emerged as a serious contender for the post Silicon era. Graphene NanoRibbon (GNR) devices have similar performance characteristics as Carbon Nano Tube (CNT) ones. However, lithographic patterning methods applied to graphene avoids the degree of chirality control and alignment issues typical of CNTs. GNR devices and GNR interconnect can be seamlessly obtained by patterning...
By applying tensile local uniaxial strain on 5 nm of drain region and compressive local uniaxial strain on 2.5 nm of source and 2.5 nm of channel regions of graphene nanoribbon tunneling field-effect transistor (GNR-TFET), we propose a new bandgap-engineered (BE) GNR-TFET. Simulation of the suggested device is done based on non-equilibrium Green’s function (NEGF) method by a mode-space approach...
Contributing to the need for new graphene nanoribbon (GNR) structures that can be synthesized with atomic precision, we have designed a reactant that renders chiral (3,1)-GNRs after a multistep reaction including Ullmann coupling and cyclodehydrogenation. The nanoribbon synthesis has been successfully proven on different coinage metals, and the formation process, together with the fingerprints ...
The ability to tune the properties of graphene nanoribbons (GNRs) through modification of the nanoribbon's width and edge structure widens the potential applications of graphene in electronic devices. Although assembly of GNRs has been recently possible, current methods suffer from limited control of their atomic structure, or require the careful organization of precursors on atomically flat su...
Submitted for the MAR10 Meeting of The American Physical Society Half-metallic Armchair Graphene Nanoribbon FUMIYUKI ISHII, KEISUKE SAWADA, MINEO SAITO, Kanazawa University — Among a variety of applications of graphenes, spintronics applications are considered to be hopeful. For an example, spin transport has been experimentally observed by using graphene layers [1]. There are two types of shap...
There has been growing interest in developing nanoelectronic devices based on graphene because of its superior electrical properties. In particular, patterning graphene into a nanoribbon can open a bandgap that can be tuned by changing the ribbon width, imparting semiconducting properties. In this study, we report the effect of ribbon width on electrical transport properties of graphene nanorib...
This article describes the synthesis and characterization of ZnO nanoring embedded graphene nanoribbons. Patterned holes (mesopore dia.) in graphene nanoribbons are chemically generated, leading to a high density of the edge planes. These planes carry negatively charged surface groups (like -COOH and -OH) and therefore anchor the metal ions in a cordial fashion forming a string of metal ions al...
In this paper, the analysis of charge injection from metal to a contacted graphene nanoribbon (GNR) is developed by means of a scattering matrix approach. The charge transport, described by the Schrödinger equation in the 2D domain of the GNRs, is solved, together with the 3D Poisson equation for the potential distribution. Varying the work function of the metal contacte...
We demonstrate the controlled tuning of the electronic band structure of large-arrays of graphene nanoribbons (GNRs) by chemical functionalization. The GNR arrays are synthesized by substrate-controlled metal-assisted etching of graphene in H2 at high temperature, and functionalized with different molecules. From Raman spectroscopy and carrier transport measurements, we found that 4-nitrobenzen...
Nitrogen-doped graphene nanoribbons (N-GNRs) were prepared by thermal treatment of the as-zipped graphene oxide nanoribbons in NH3 gas. X-ray photoelectron spectroscopy (XPS) measurements revealed a high nitrogen content up to 6.5 atom% for the as-prepared N-GNRs. This, together with the high Brunauer-Emmett-Teller (BET) surface area of about 751 cm(2) g(-1), prompted us to use the N-GNR as the...
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