نتایج جستجو برای: Graphene Nanoribbon

تعداد نتایج: 50796  

2012

We describe a simple graphene nanoribbon and bottom gate system and present numerical algorithms for solving Poisson’s and Thomas–Fermi equations for electrons in the graphene nanoribbon. The Poisson’s equation is solved using finite difference and finite element methods. Using the Poisson and Thomas–Fermi equations we calculate an electrostatic potential and surface electron density in the gra...

Journal: :ACS nano 2012
Guanxiong Liu Yanqing Wu Yu-Ming Lin Damon B Farmer John A Ott John Bruley Alfred Grill Phaedon Avouris Dirk Pfeiffer Alexander A Balandin Christos Dimitrakopoulos

A process for fabricating dense graphene nanoribbon arrays using self-assembled patterns of block copolymers on graphene grown epitaxially on SiC on the wafer scale has been developed. Etching masks comprising long and straight nanoribbon array structures with linewidths as narrow as 10 nm were fabricated, and the patterns were transferred to graphene. Our process combines both top-down and sel...

Journal: :Nanotechnology 2014
Seokhan Park Je Moon Yun Uday Narayan Maiti Hyoung-Seok Moon Hyeong Min Jin Sang Ouk Kim

Directed self-assembly of a block copolymer is successfully employed to fabricate device-oriented graphene nanostructures from CVD grown graphene. We implemented mussel-inspired polydopamine adhesive in conjunction with the graphoepitaxy principle to tailor graphene nanoribbon arrays and a graphene nanomesh located between metal electrodes. Polydopamine adhesive was utilized for facile and dama...

2009
Xiulin Ruan Yong P. Chen

We have used classical molecular dynamics based on the Brenner potential describing carbon-carbon covalent bonds to study the melting point and vacancy movement in a rectangular graphene nanoribbon. The melting point of the graphene nanoribbon extracted from the numerical simulation is ~3400 K. We also found that two separated vacancies at high temperature (e.g., ~3000 K, below the melting poin...

2017

The new revolution in dental materials is due to use of nanomaterials in dentistry. Graphene is one of the carbon nanoallotrope that has the potential to enhance properties of materials used in dentistry. The use of this 2D crystal is dentistry is virtue to its typical properties that provides improved performance, extended functionality in materials. In this paper, a review is done to study 3D...

Journal: :ACS nano 2014
Marcus Freitag Tony Low Luis Martin-Moreno Wenjuan Zhu Francisco Guinea Phaedon Avouris

We report mid-infrared photocurrent spectra of graphene nanoribbon arrays on SiO2 dielectrics showing dual signatures of the substrate interaction. First, hybrid polaritonic modes of graphene plasmons and dielectric surface polar phonons produce a thermal photocurrent in graphene with spectral features that are tunable by gate voltage, nanoribbon width, and light polarization. Second, phonon po...

2017
Ruslan D. Yamaletdinov Yuriy V. Pershin

Here, we demonstrate that stable conformations of graphene nanoribbons can be identified using pull and release experiments, when the stretching force applied to a single-layer graphene nanoribbon is suddenly removed. As it is follows from our numerical experiments performed by means of molecular dynamics simulations, in such experiments, favorable conditions for the creation of folded structur...

2014
Meisam Rahmani Razali Ismail M. T. Ahmadi Komeil Rahmani Ali H. Pourasl

The approaching scaling of Field Effect Transistors (FETs) in nanometer scale assures the smaller dimension, low-power consumption, very large computing power, low energy delay product and high density as well as high speed in processor. Trilayer graphene nanoribbon with different stacking arrangements (ABA and ABC) indicates different electrical properties. Based on this theory, ABA-stacked tr...

2013
Meisam Rahmani Mohammad Taghi Ahmadi Hediyeh Karimi Feiz Abadi Mehdi Saeidmanesh Elnaz Akbari Razali Ismail

Recent development of trilayer graphene nanoribbon Schottky-barrier field-effect transistors (FETs) will be governed by transistor electrostatics and quantum effects that impose scaling limits like those of Si metal-oxide-semiconductor field-effect transistors. The current-voltage characteristic of a Schottky-barrier FET has been studied as a function of physical parameters such as effective ma...

2010
Zhao Zhang Teng Li

We study the morphologic interaction between graphene and Si nanowires on a SiO2 substrate, using molecular mechanics simulations. Two cases are considered: (1) a graphene nanoribbon intercalated by a single Si nanowire on a SiO2 substrate and (2) a blanket graphene flake intercalated by an array of Si nanowires evenly patterned in parallel on a SiO2 substrate. Various graphene morphologies eme...

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