some issues; leakage, tunneling currents, boron diffusion are threatening sio2 to be used as a good gate dielectric for the future of the cmos (complementary metal- oxide- semiconductor) transistors. for finding an alternative and novel gate dielectric, the nio (nickel oxide) and pva (polyvinyl alcohol) nano powders were synthesized with the sol-gel method and their nano structural properties w...

Despite the simplicity of the hexagonal graphene structure formed by carbon atoms, the electronic behavior shows fascinating properties, giving high expectation for the possible applications of graphene in the field. The Graphene Nano-Ribbon Field Effect Transistor (GNRFET) is an emerging technology that received much attention in recent years. In this paper, we investigate the device performan...

This work investigates the channel thickness dependency of high-k gate dielectric-based complementary metal-oxide-semiconductor (CMOS) inverter circuit built using a conventional double-gate metal gate oxide semiconductor field-effect transistor (DG-MOSFET). It is espied that the use of high-k dielectric as a gate oxide in n/p DG-MOSFET based CMOS inverter results in a high noise margin as well...

We study gate capacitance of deep submicron MOSFETs with high-K gate dielectrics. Schrödinger’s equation is solved by applying an open boundary condition at silicon-gate dielectric interface. Self-consistent numerical results reveal that accounting for wave function penetration into the gate dielectric causes the carrier distribution to be shifted closer to the gate dielectric. This effect incr...

In this paper, we demonstrate high mobility solution-processed metal-oxide thin-film transistors (TFTs) by using a high-frequency-stable ionic-type hybrid gate dielectric (HGD). The HGD gate dielectric, a blend of sol-gel aluminum oxide (AlOx) and poly(4-vinylphenol) (PVP), exhibited high dielectric constant (ε~8.15) and high-frequency-stable characteristics (1 MHz). Using the ionic-type HGD as...

polyvinylpyrrolidone  /  nickel  oxide  (pvp/nio)  dielectrics  were fabricated  with  sol-gel  method  using  0.2  g  of  pvp  at  different working  temperatures  of  80,  150  and  200  ºc.  structural  properties and surface morphology of the hybrid films were investigated by x-ray  diffraction  (xrd)  and  scanning  electron microscope  (sem) respectively. energy dispersive x-ray spectrosc...

Some issues; leakage, tunneling currents, boron diffusion are threatening SiO2 to be used as a good gate dielectric for the future of the CMOS (complementary metal- oxide- semiconductor) transistors. For finding an alternative and novel gate dielectric, the NiO (Nickel oxide) and PVA (polyvinyl alcohol) nano powders were synthesized with the sol-gel method and their nano structural p...

In this paper, novel hybrid MOSFET(HMOS) structure has been proposed to reduce the gate leakage current drastically. This novel hybrid MOSFET (HMOS) uses source/drain-to-gate non-overlap region in combination with high-K layer/interfacial oxide as gate stack. The extended S/D in the non-overlap region is induced by fringing gate electric field through the high-k dielectric spacer. The gate leak...

1 Introduction Hf-based silicates and aluminates showing good thermal stability [1] and favorable energy-band alignment [2] have been intensively studied as most promising alternative gate dielectrics. Despite a number of efforts to improve the dielectric properties of such high-k thin films, reliability issues such as charge trapping and dielectric wear-out are still matters of research [3, 4]...