In this paper, the structure of SAW has been studied. In previous work in SAW, materials such as lithium niobium, lithium tantalite and gallium nitride were used in the structure of SAW, and thus had a low operating frequency and the highest reported operating frequency was about 4 GHz. In this paper, aluminum nitride and gallium nitride in the SAW structure are used in combination. The electro...

Since 1994, the Applied Physics Laboratory has been collaborating with NASA Goddard Space Flight Center to develop photodetectors based on gallium nitride and aluminum gallium nitride material produced in the Milton S. Eisenhower Research and Technology Development Center. This article describes the results of our collaboration and highlights the development of gallium nitride photodetectors wi...

The performance ofaluminum gallium nitride/gallium nitride (AlGaN/GaN) high-electron-mobility transistors (HEMTS) diamond and silicon carbide (SiC) substrates is examined. Additionally, the temperature rise in similar devices on diamond and SiC substrates is reported. Recently, identical AlGaN/GaN HEMTs have been fabricated at Cornell NanoScale Science & Technology Facility (CNF) on diamond, bu...

A review of the dependence of the electron mobility on the free carrier concentration for gallium nitride and indium nitride nanowires grown using hot-wall chemical vapour deposition is presented. Gallium nitride nanowires exhibit mobilities of 100 cm2/Vs to below 1 cm2/Vs for carrier concentrations of 1019 to 1020 cm−3. Theoretical estimations and annealing experiments indicate that the nanowi...

Wide bandgap semiconductors have expanded the scope of device applications beyond those of silicon and gallium arsenide. Exploitation of wide bandgap semiconductors holds promise for revolutionary improvements in the cost, size, weight and performance of a broad range of military and commercial microelectronic and opto-electronic systems. The inherent material properties of silicon carbide, gal...

Ferromagnetic delta-phase manganese gallium with Mn:Ga ratio between 1:1 to 1.5:1 is grown on wurtzite gallium nitride and scandium nitride substrates, using molecular beam epitaxy. The dependencies of growth properties, e.g. interface formation, surface reconstruction and crystalline quality, on substrate crystallographic structure and polarity are investigated. Results suggest that for growth...

Adam J. Hauser and Fengyuan Yang Department of Physics, The Ohio State University, 191 Woodruff Avenue, Columbus, Ohio 43210, USA (Dated: August 22, 2010) Abstract Ferromagnetic δ-phase manganese gallium layers with Mn/(Mn + Ga) = 60% have been successfully grown on ScN(001) by molecular beam epitaxy, expanding possibilities for ferromagnetic layers on nitride semiconductors. The in-plane epita...

RAMACHANDRAN, RAMYA. Investigation of Surface States in Gallium Nitride Devices using a New High Frequency Measurement Technique. (Under the direction of Dr. Douglas W. Barlage). Surface states place a limitation on the high-frequency behavior of Gallium Nitride devices by causing RF dispersion. They are also a source of undesirable 1/f noise. This thesis specifically aims to explore techniques...

The authors report the growth of iron nitride on zinc-blende gallium nitride using molecular beam epitaxy. First, zinc-blende GaN is grown on a magnesium oxide substrate having 001 orientation; second, an ultrathin layer of FeN is grown on top of the GaN layer. In situ reflection high-energy electron diffraction is used to monitor the surface during growth, and a well-defined epitaxial relation...

Nitride semiconductors are attractive because they can be environmentally benign, comprised of abundant elements and possess favourable electronic properties. However, those currently commercialized are mostly limited to gallium nitride and its alloys, despite the rich composition space of nitrides. Here we report the screening of ternary zinc nitride semiconductors using first-principles calcu...