The Raman spectrum of gallium oxide -Ga2O3 nanowires with 001 growth direction is identical to that of the bulk Ga2O3 Y. C. Choi et al. Adv. Mater. 12, 746 2000 while that of -Ga2O3 nanowires with 401̄ growth direction is redshifted by 4–23 cm−1 Y. H. Gao et al. Appl. Phys. Lett. 81, 2267 2002 . Here we report the Raman and Fourier transform infrared spectra of -Ga2O3 nanowires with 110 growth d...

Diameter tuning of [Formula: see text]-Ga2O3 nanowires using chemical vapor deposition technique have been investigated under various experimental conditions. Diameter of root grown [Formula: see text]-Ga2O3 nanowires having monoclinic crystal structure is tuned by varying separation distance between metal source and substrate. Effect of gas flow rate and mixer ratio on the morphology and diame...

The growth of monoclinic Ga2O3 nanowires, nano-ribbons and nano-sheets has been investigated. Results indicate that high quality single crystal nanowires can be grown at 900°C using an Au catalyst, while single crystal nano-ribbons and nano-sheets require no metal catalyst for growth. Since bulk Ga2O3 is a promising material for high temperature sensing, Ga2O3 nanowires and nano-ribbons may pro...

Ultrafast pump-probe and transient photoluminescence spectroscopy were used to investigate carrier dynamics in β-Ga2O3 nanowires converted to β-Ga2O3/Ga2S3 under H2S between 400 to 600 °C. The β-Ga2O3 nanowires exhibited broad blue emission with a lifetime of 2.4 ns which was strongly suppressed after processing at 500-600 °C giving rise to red emission centered at 680 nm with a lifetime of 19 ...

The authors experimentally demonstrate a simple and efficient approach for nucleating the catalytic chemical vapor deposition CVD growth of GaN nanowires, Ga2O3 nanowires, and Ga2O3 nanoribbons by using ion implantation of Fe+ into thermally grown SiO2 layers and subsequent annealing to form the catalyst nanoparticles. This work shows that ion implantation can be used as a versatile method to c...

The bulk nucleation and basal growth of semiconducting nanowires from molten Ga pools has been demonstrated earlier using oxygen/hydrogen plasma over molten Ga pools. Herein, we extend the above concept for bulk synthesis of oxide and sulfide nanowires of low-melting metal melts such as Sn and In. Specifically, nanowires of b-Ga2O3, b-In2O3, SnO2, a-Ga2S3, and b-In2S3 were synthesized using dir...

UNLABELLED Growing Ga2O3 dielectric materials at a moderately low temperature is important for the further development of high-mobility III-V semiconductor-based nanoelectronics. Here, β-Ga2O3 nanowires are successfully synthesized at a relatively low temperature of 610°C by solid-source chemical vapor deposition employing GaAs powders as the source material, which is in a distinct contrast to ...

This paper presents the synthesis of single crystalline, selfcatalytic β-Ga2O3 rods by a low pressure chemical vapor deposition technique. The effects of oxygen concentration and growth temperature on the morphology and growth rate of β-Ga2O3 rods were studied. The β-Ga2O3 rods were synthesized on a 3C-SiC film deposited on a silicon substrate utilizing high purity gallium (Ga) metal and oxygen...

Highly crystalline b-Ga2O3 nanowires with two morphologies have been synthesized through physical evaporation of Te doped GaAs powder in Ar atmosphere. Growth is not based on VLS mechanism due to absence of Te. S in place of Te resulted in similar nanostructures. Some of the nanowires exhibit herringbone morphology with presence of hexagonal crystallites in regular spacing along the nanowire ax...

Surface-enhanced Raman spectroscopy !SERS" was performed on Ga2O3/Ag and ZnO/Ag nanowires, which were arranged in either a crossover or noncrossing geometry. Results indicate a high SERS sensitivity !near 0.2 pg" for nanowires arranged in a crossing geometry. It is suggested that this is due to the dielectric core/metal shell structure, as well as to the nanowire crossings, which are regions of...