a comprehensive study of schottky barrier mosfet (sbmosfet) scaling issue is performed to determine the role of wafer orientation and structural parameters on the performance of this device within non-equilibrium green's function formalism. quantum confinement increases the effective schottky barrier height (sbh). (100) orientation provides lower effective schottky barrier height in comparison ...

The non-equilibrium Green's function (NEGF) formalism provides a sound conceptual basis for the development of atomic level quantum mechanical simulators that will be needed for nanoscale MOS devices of the future. However, this formalism is based on concepts that are unfamiliar to most device physicists and as such remains relatively obscure. In this paper we try to achieve two objectives : (1...

Exceptional electronic and mechanical properties together with nanoscale diameter make carbon nanotubes (CNTs) promising candidates for nanoscale transistors. Semiconducting CNTs can be used as a channel for field-effect transistors (FETs), and metallic CNTs can serve as interconnect wires. In short devices carrier transport through the device is nearly ballistic [1]. The non-equilibrium Green’...

In this paper, the performance of a CNT-JLTFET under different values of torsional strains of 0, 3, and 5 degrees has been investigated. Simulation has been carried out using non-equilibrium Green’s function (NEGF) formalism in the mode-space approach and in the ballistic limit. The simulation results indicate that, under torsional strain, an increase occurs in the energy band-gap, and thus the...

Due to their small size and unique properties, single-molecule electronics have long seen research interest from experimentalists theoreticians alike. From a theoretical standpoint, modeling these systems using electronic structure theory can be difficult due the importance of electron correlation in determination molecular this computationally expensive consider, particularly multiconfiguratio...

Through the Non-Equilibrium Green’s Function (NEGF) formalism, quantumscale device simulation can be performed with the inclusion of electron-phonon scattering. However, the simulation of realistically sized devices under the NEGF formalism typically requires prohibitive amounts of memory and computation time. Two of the most demanding computational problems for NEGF simulation involve mathemat...

This work deals with the modeling and the numerical simulation of quantum transport in multidimensional open nanoscale devices. The electron transport in the device is described using the Non-Equilibrium Green’s Functions (NEGF) formalism and the variational form of the problem is solved using the finite element method (FEM). In this approach, the derivation of the boundary conditions at the in...

We review one of the most versatile theoretical approaches to study time-dependent correlated quantum transport in nano-systems: non-equilibrium Green's function (NEGF) formalism. Within this formalism, can treat, on same footing, inter-particle interactions, external drives and/or perturbations, and coupling baths with a (piece-wise) continuum set degrees freedom. After historical overview the...

Carrier transport in modern nanoelectronic devices involves physical scales which require quantum descriptions. Basic quantum mechanics describes systems determined by Hamiltonian state vectors |Ψ>, which provide the spatial and time dependences of the physical observables. A pure state density operator |Ψ><Ψ| as obtained by a single state vector contains the most complete information about the...