نتایج جستجو برای: Field Effect Transistor

تعداد نتایج: 2340768  

Journal: :journal of advances in computer research 0
meysam mohammadi department of computer engineering, ayatollah amoli branch, islamic azad university, amol, iran yavar safaei mehrabani independent researcher

full adder cell is often placed in the critical path of other circuits. therefore it plays an important role in determining the entire performance of digital system. moreover, portable electronic systems rely on battery and low-power design is another concern. in conclusion it is a vital task to design high-performance and low-power full adder cells. since delay opposes against power consumptio...

Journal: :Electrochemical science advances 2022

Abstract Field‐effect transistors have strong applications in biosensing field from pH and glucose monitoring to genomics, proteomics, cell signaling assays, biomedical diagnostics general. Notable advantages are the high sensitivity (thanks intrinsic amplification), quick response (useful for real‐time monitoring), suitability miniaturization, compact portable read‐out systems. The initial con...

Journal: :international journal of nanoscience and nanotechnology(ijnn 0
s. sam daliri technical engineering department, university of mohaghegh ardabili, ardabil, iran j. javidan faculty of technical engineering department, university of mohaghegh ardabili, ardabil, iran a. bozorgmehr nano technology and quantum computing lab, shahid beheshti university, gc, tehran, iran

multiplier is one of the important components in many systems such as digital filters, digital processors and data encryption. improving the speed and area of multipliers have impact on the performance of larger arithmetic circuits that are part of them. wallace algorithm is one of the most famous architectures that uses a tree of half adders and full adders to increase the speed and reduce the...

Journal: :international journal of nano dimension 0
r. abband pashaki department of electrical engineering, guilan science and research branch, islamic azad university, guilan, iran. s. a. sedigh ziabari department of electrical engineering, roudbar branch, islamic azad university, roudbar, iran.

in this paper, the temperature dependence of some characteristics of cylindrical gate-all-around si nanowire field effect transistor (gaa-si-nwfet) is investigated to representing the temperature nano-sensor structures and improving their performance. firstly, we calculate the temperature sensitivity of drain-source current versus the gate-source voltage of gaa-si-nwfet to propose the temperatu...

Journal: :Physical Review Letters 2003

Journal: :Journal of Applied Physics 2013

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