نتایج جستجو برای: Field Effect Diode (FED)
تعداد نتایج: 2406486 فیلتر نتایج به سال:
A new side-contacted field effect diode (S-FED) structure has beenintroduced as a modified S-FED, which is composed of a diode and planar double gateMOSFET. In this paper, drain current of modified and conventional S-FEDs wereinvestigated in on-state and off-state. For the conventional S-FED, the potential barrierheight between the source and the channel is observed to b...
Abstract The excellent scalability of the vertical channel Field Effect Diode (FED) type 1T-DRAM including Self-Heating Effect (SHE) is presented for the first time. The vertical channel FED type shows the excellent hold characteristics (100msec at 358K) even when silicon pillar diameter is scaled down to 12nm. Moreover, we also show that by employing the vertical FED type, increase of lattice ...
Field Effect Diode (FED)s are interesting device in providing the higherON-state current and lower OFF–state current in comparison with SOI-MOSFETstructures with similar dimensions. The impact of channel length and band-to-bandtunneling (BTBT) on the OFF-state current of the side contacted FED (S-FED) has beeninvestigated in this paper. To find the lowest effective channel length, this device i...
One of the main problems of field effect diode (FED) is the increasing of its turn-off current as the channel length decreases. Thus, in this paper, a new structure is presented which decreases the injection of extra carriers to the channel and also increases the control of the gate over the channel by reducing the portion of channel shared with the source and drain regions and without the need...
Using spice 9.3, we have modeled (I-V) characteristics of a Modified Field Effect Diode (M-FED) with gate length of 75 nm and oxide thickness of 10 nm. An SRAM cell (Register) has been designed with the simulated M-FED and has been compared to an SOIMOSFET based circuit. Simulation results demonstrate that clock frequency applied to a memory cell which is designed with M-FED is more than 2 orde...
the performance of nanoscale field effect diodes as a function of the spacer length between two gates is investigated. our numerical results show that the ion/ioff ratio which is a significant parameter in digital application can be varied from 101 to 104 for s-fed as the spacer length between two gates increases whereas this ratio is approximately constant for m-fed. the high-frequency perform...
any change in the refractive index of a laser active medium can lead to serious degradation of beam quality, laser beam modes, laser performance and variation in the intensity distribution. alteration in the refractive index of laser active medium is especially notable in high power lasers. it is clear that in the laser beam production, the pumping agent induces a great amount of heat which...
Abstract The fabrication and I-V characteristics of the novel AlGaN/GaN field effect diode are reported. This diode has a distinguishing anode structure and the relatively thick AlGaN barrier layer in contrast a conventional field-effect Schottky barrier diode (FESBD). By using fluoride-based plasma treatment, we could reduce its turn-on voltage to 0 V and decrease its leakage current at the re...
نمودار تعداد نتایج جستجو در هر سال
با کلیک روی نمودار نتایج را به سال انتشار فیلتر کنید