نتایج جستجو برای: Etching rate

تعداد نتایج: 970589  

Journal: :Japanese Journal of Health Physics 1990

Journal: :Journal of Vacuum Science & Technology A 2020

The metal-assisted chemical etching (MACE) was used to synthesis silicon nanowires. The effect of etchant concentration, etching and chemical plating time and doping density on silicon nanowires length were investigated. It is held that the increasing of HF and H2O2 concentrations lead to etching rate increment and formation of wire-like structure. The results show that, the appropriate ratio o...

2000
Takashi Meguro Yoshinobu Aoyagi

Dry etching techniques employing ion beam induced surface reaction and the possibility of highly charged ion beam in dry etching are described, and the preliminary work on dry etching of GaAs using highly charged ion (HCI) is also presented. In usual dry etching, total etch rate is a summation of the physical sputtering rate, the chemical etching rate, and the ion-induced chemical etching rate....

2011
L. V. Minh F. Horikiri K. Shibata H. Kuwano

In this paper, a new lead-free piezoelectric (K,Na)NbO3 (KNN) film is presented as a promising, environment-friendly alternative to the conventional piezoelectric thin film materials like PZT, etc. with regard to applying into piezo-MEMS devices in general and micro-energy-harvesting devices in particular. The KNN films deposited by the RF magnetron sputtering deposition system were revealed ex...

2012
Hyungjoo Shin Weiye Zhu Vincent M. Donnelly Demetre J. Economou

The authors report a new, important phenomenon: photo-assisted etching of p-type Si in chlorinecontaining plasmas. This mechanism was discovered in mostly Ar plasmas with a few percent added Cl2, but was found to be even more important in pure Cl2 plasmas. Nearly monoenergetic ion energy distributions (IEDs) were obtained by applying a synchronous dc bias on a “boundary electrode” during the af...

Journal: :KAGAKU KOGAKU RONBUNSHU 1998

Journal: :Journal of colloid and interface science 2011
A C Fowler J A Ward S B G O'Brien

We consider the situation where a multicomponent solid is etched using one or more acids. Of fundamental interest is the rate of surface etching but when this involves multicomponent surface reactions, it becomes unclear how the overall rate can be estimated. In this paper, we sketch a simple model designed to determine the effective etching rate by means of an atomic scale model of the etching...

2015
Babacar Faye Mouhamed Sarr Khaly Bane Adjaratou Wakha Aidara Seydina Ousmane Niang Abdoul Wakhabe Kane

This study evaluated the one-year clinical performance of a one-step, self-etch adhesive (Optibond All-in-One, Kerr, CA, USA) combined with a composite (Herculite XRV Ultra, Kerr Hawe, CA, USA) to restore NCCLs with or without prior acid etching. Restorations performed by the same practitioner were evaluated at baseline and after 3, 6, and 12 months using modified USPHS criteria. At 6 months, t...

2014
Shojiro Miyake Shohei Yamazaki

To realize the nanofabrication of silicon surfaces using atomic force microscopy (AFM), we investigated the etching of mechanically processed oxide masks using potassium hydroxide (KOH) solution. The dependence of the KOH solution etching rate on the load and scanning density of the mechanical pre-processing was evaluated. Particular load ranges were found to increase the etching rate, and the ...

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