The term ‘epitaxial’ is applied to a film grown on top of the crystalline substrate in ordered fashion that atomic arrangement of the film accepts crystallographic structure of the substrate. Epitaxial growth is one of the most important techniques to fabricate various ‘state of the art’ electronic and optical devices. Modern devices require very sophisticated structure, which are composed of t...

We investigate low-temperature epitaxial growth of thin silicon films by HWCVD on Si w1 0 0x substrates and polycrystalline template layers formed by selective nucleation and solid phase epitaxy (SNSPE). We have grown 300-nm thick epitaxial layers at 300 8C on silicon w1 0 0x substrates using a high H :SiH ratio of 70:1. Transmission electron microscopy confirms that the 2 4 films are epitaxial...

We grew epitaxial layers on 4H-silicon carbide (SiC) Si-face substrates with a 1° off-angle. The suppression of 3C-inclusion formation during growth at a high C/Si ratio was investigated, because a growth technique with a high C/Si ratio is needed to decrease residual nitrogen incorporation. 3C inclusions were generated both at the interface between the substrate and epitaxial layer, and during...

We have investigated the low-temperature epitaxial growth of thin silicon films by hotwire chemical vapor deposition (HWCVD). Using reflection high energy electron diffraction (RHEED) and transmission electron microscopy (TEM), we have found conditions for epitaxial growth at low temperatures achieving twinned epitaxial growth up to 6.8 μm on Si(100) substrates at a substrate temperature of 230...

We report on the epitaxial growth of crystalline silicon films on (100) oriented crystalline silicon substrates by standard plasma enhanced chemical vapor deposition at 175 °C. Such unexpected epitaxial growth is discussed in the context of deposition processes of silicon thin films, based on silicon radicals and nanocrystals. Our results are supported by previous studies on plasma synthesis of...

Single crystals consisting various surface morphologies and epitaxial structures were applied to investigate the effect of other phase regions in the vicinity of a given tethered chains-covered area having a certain molecular weight of amorphous brushes. The designed experiments demonstrated that regardless of the type of surface morphology (patterned and especial mixed-brushes, homo and co...

Ni nanocrystals (NCs) were embedded in BaTiO3 epitaxial films using the laser molecular beam epitaxy. The processes involving the self-organization of Ni NCs and the epitaxial growth of BaTiO3 were discussed. With the in situ monitoring of reflection high-energy electron diffraction, the nanocomposite films were engineered controllably by the fine alternation of the self-organization of Ni NCs ...

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We report here the epitaxial growth of InGaN/GaN quantum wells on freestanding GaN gratings by molecular beam epitaxy (MBE). Various GaN gratings are defined by electron beam lithography and realized on GaN-on-silicon substrate by fast atom beam etching. Silicon substrate beneath GaN grating region is removed from the backside to form freestanding GaN gratings, and the patterned growth is subse...

A combination of in situ and post-deposition experiments were designed to probe surface roughening pathways leading to epitaxial breakdown during low-temperature (Ts595– 190 °C) growth of Ge~001! by molecular beam epitaxy ~MBE!. We demonstrate that epitaxial breakdown in these experiments is not controlled by background hydrogen adsorption or gradual defect accumulation as previously suggested,...