we call $h$ an $ss$-embedded subgroup of $g$ if there exists a‎ ‎normal subgroup $t$ of $g$ such that $ht$ is subnormal in $g$ and‎ ‎$hcap tleq h_{sg}$‎, ‎where $h_{sg}$ is the maximal $s$-permutable‎ ‎subgroup of $g$ contained in $h$‎. ‎in this paper‎, ‎we investigate the‎ ‎influence of some $ss$-embedded subgroups on the structure of a‎ ‎finite group $g$‎. ‎some new results were obtained.‎

Let H be a subgroup of a group G. H is said to be S-embedded in G if G has a normal T such that HT is an S-permutable subgroup of G and H ∩ T ≤ H sG, where H denotes the subgroup generated by all those subgroups of H which are S-permutable in G. In this paper, we investigate the influence of minimal S-embedded subgroups on the structure of finite groups. We determine the structure the finite grou...

we call $h$ an $ss$-embedded subgroup of $g$ if there exists a‎ ‎normal subgroup $t$ of $g$ such that $ht$ is subnormal in $g$ and‎ ‎$hcap tleq h_{sg}$‎, ‎where $h_{sg}$ is the maximal $s$-permutable‎ ‎subgroup of $g$ contained in $h$‎. ‎in this paper‎, ‎we investigate the‎ ‎influence of some $ss$-embedded subgroups on the structure of a‎ ‎finite group $g$‎. ‎some new results were obtained.

let h be a subgroup of a group g. h is said to be s-embedded in g if g has a normal t such that ht is an s-permutable subgroup of g and h ∩ t ≤ h sg, where h denotes the subgroup generated by all those subgroups of h which are s-permutable in g. in this paper, we investigate the influence of minimal s-embedded subgroups on the structure of finite groups. we determine the structure the finite grou...

AUC-SVM directly maximizes the area under the ROC curve (AUC) through minimizing its hinge loss relaxation, and the decision function is determined by those support vector sample pairs playing the same roles as the support vector samples in SVM. Such a learning paradigm generally emphasizes more on the local discriminative information just associated with these support vectors whereas hardly ta...

In this work, a novel Silicon on Insulator (SOI) MOSFET is proposed and investigated. The drain and source electrode structures are optimized to enhance ON-current while global device temperature and hot carrier injection are decreased. In addition, to create an effective heat passage from channel to outside of the device, a silicon region has embedded in the buried oxide. In order to reduce th...