نتایج جستجو برای: Electric field profile

تعداد نتایج: 1096623  

Insulator strings with several material and profiles are very common in overhead transmission lines. However, the electric field and voltage distribution of insulator string is uneven which may easily lead to corona, insulators’ surface deterioration and even flashover. So the calculation of the electric field and voltage distribution along them is a very important factor in the operation time....

Objective(s): Since the electric field is the main driving force in electrospinning systems, the modeling and analysis of electric field distribution are critical to the nanofibers production. The aim of this study was modeling of the electric field and investigating the various parameters on polyacrylonitrile (PAN) nanofibers morphology and diameter. Methods:</st...

پایان نامه :وزارت علوم، تحقیقات و فناوری - دانشگاه شیراز - دانشکده علوم 1390

any change in the refractive index of a laser active medium can lead to serious degradation of beam quality, laser beam modes, laser performance and variation in the intensity distribution. alteration in the refractive index of laser active medium is especially notable in high power lasers. it is clear that in the laser beam production, the pumping agent induces a great amount of heat which...

2003
Anthony C. Boucouvalas Xin Qian

Abstract – A new and accurate refractive index profile synthesis method for optical waveguides is demonstrated using the transmitted near electric field data. This method is based on an inverse transmission line technique. From Maxwell’s equations, we derive a transmission line equivalent circuit for the refractive index profile of a cylindrical dielectric waveguide. We demonstrate how to use t...

CHOO R.T.C., , TOGURI J.M., ,

A two dimensional mathematical model has been developed for describing the temperature, flow, and electric fields in the are column of the Gas Metal Arc Welding (GMAW) of aluminum in argon shielding gas using axisymmetric Navier-Stokes, Maxwell, and differential thermal energy equations. The predicted results are most sensitive to the cathode spot radius and an optimum cathode spot radius exist...

In this paper, we propose a new heterostructure dual material gate junctionless field-effect transistor (H-DMG-JLFET), with negative differential resistance (NDR) characteristic. The drain and channel material are silicon and source material is germanium. The gate electrode near the source is larger. A dual gate material technique is used to achieve upward band bending in order to access n-i-p-...

2015
Muhamad Ramdzan Buyong Farhad Larki Mohd Syafiq Faiz Azrul Azlan Hamzah Jumrail Yunas Burhanuddin Yeop Majlis

In this work, the dielectrophoretic force (F(DEP)) response of Aluminium Microelectrode Arrays with tapered profile is investigated through experimental measurements and numerical simulations. A standard CMOS processing technique with a step for the formation of a tapered profile resist is implemented in the fabrication of Tapered Aluminium Microelectrode Arrays (TAMA). The F(DEP) is investigat...

Infrared detectors can be used for a variety of applications such as: using in fiber-optic communications. Conventional technology for IR detectors is using p-i-n structure based on GaAs compound. This paper reports on the design and modeling of an IR detector using a p-i-n GaAs structure. Comsol software is used to simulate the model and the detector is discussed for terminal current, dopant p...

Journal: :Optics express 2012
C Bamber B Sutherland A Patel C Stewart J S Lundeen

We present a method for measuring the transverse electric field profile of a beam of light which allows for direct phase retrieval. The measured values correspond, within a normalization constant, to the real and imaginary parts of the electric field in a plane normal to the direction of propagation. This technique represents a self-referencing method for probing the wavefront characteristics o...

Journal: :Physical review letters 2008
L M Zhang M M Fogler

We study the charge density distribution, the electric field profile, and the resistance of an electrostatically created lateral p-n junction in graphene. We show that the electric field at the interface of the electron and hole regions is strongly enhanced due to limited screening capacity of Dirac quasiparticles. Accordingly, the junction resistance is lower than estimated in previous literat...

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