tio2 nanorods can be used as dye-sensitized solar cells and as various sensors and photocatalysts. these nanorods are synthesized by a using thermal corrosion process in a naoh solution at 200 oc with tio2 powder as a source material. in the present work, the synthesis of tio2 nanorods in anatase, rutile and ti8o15 phases and the synthesis of tio2 nanorods by using the sol-gel method and alkali...

the study reports some preliminary investigations on the template free synthesis of a scantly investigated polyaniline (pani) derivative-phenylenediamine (pda) by template free method in the presence of oxalic acid (oa) (dopant), using ammonium persulfate as oxidant. polymerization of phenylenediamine (pda) was confirmed by the ft-ir as well as uv–visible studies. the morphology of phenylenedia...

The retarded dopant diffusion in Si nanostructures is investigated using the first principles calculation. It is presented that weak dopant-dopant interaction energy (DDIE) in nanostructures is responsible for the suppressed dopant diffusion in comparison with that in bulk Si. The DDIE is significantly reduced as the diameter of the Si nanowire becomes smaller. The mechanical softening and quan...

Current dopant diffusion theory is based on dopant-point-defect interaction, and assumes that the number of dopant-defect pairs is much smaller than the unpaired dopant concentration. In cases where a large number of excess defects are created from implantation damage, this may no longer be a valid assumption. A new derivation of the dopant and defect equations is presented which is valid for a...

it has been recently shown that manufacturing p-n-junctions, field-effect and bipolar transistors, thyristors in a multilayer structure by diffusion or ion implantation with the optimization of dopant and/or radiation defects leads to increase the sharpness of p-n-junctions (both single p-n-junctions and p-n-junctions framework their system). due to the optimization, one can also obtain increas...

Annular dark field scanning transmission electron microscope (ADF-STEM) images allow detection of individual dopant atoms located on the surface of or inside a crystal. Contrast between intensities of an atomic column containing a dopant atom and a pure atomic column in ADF-STEM image depends strongly on specimen parameters and microscope conditions. Analysis of multislice-based simulations of ...

Using density functional theory (DFT) with the PBE0 density functional we investigated the role of surface dopants in the molecular and dissociative adsorption of O2 onto Al clusters of types Al50, Al50Alad, Al50X and Al49X, where X represents a dopant atom of the following elements Si, Mg, Cu, Sc, Zr, and Ti. Each dopant atom was placed on the Al(111) surface as an adatom or as a substitutiona...

It has been recently shown that manufacturing p-n-junctions, field-effect and bipolar transistors, thyristors in a multilayer structure by diffusion or ion implantation with the optimization of dopant and/or radiation defects leads to increase the sharpness of p-n-junctions (both single p-n-junctions and p-n-junctions framework their system). Due to the optimization, one can also obtain increas...

Variable-angle high-angle annular dark-field (HAADF) imaging in scanning transmission electron microscopy is developed for precise and accurate determination of three-dimensional (3D) dopant atom configurations. Gd-doped SrTiO3 films containing Sr columns containing zero, one, or two Gd dopant atoms are imaged in HAADF mode using two different collection angles. Variable-angle HAADF significant...

We investigate the dopant distribution and its influence on the oxygen ion conductivity of ceria doped with rare earth oxides by combining density functional theory and Monte Carlo simulations. We calculate the association energies of dopant pairs, oxygen vacancy pairs and between dopant ions and oxygen vacancies by means of DFT + U including finite size corrections. The cation coordination num...