نتایج جستجو برای: Detectivity

تعداد نتایج: 428  

2001
V. Ryzhii V. Mitin M. Stroscio M. Willander

We report on the analysis of thermally-limited operation of quantum-dot infrared photodetectors ~QDIPs!. A device model is developed and used to calculate the QDIP detectivity as a function of the structural parameters, temperature, and applied voltage, as well as to determine the conditions for the detectivity maximum. The QDIP detectivity is compared with that of quantum-well infrared photode...

2014
Fan Ren Kar Wei Ng Kun Li Hao Sun Connie J. Chang-Hasnain

Articles you may be interested in High-quality 1.3 m-wavelength GaInAsN/GaAs quantum wells grown by metalorganic vapor phase epitaxy on vicinal substrates Appl. Relaxed, high-quality InP on GaAs by using InGaAs and InGaP graded buffers to avoid phase separation High-detectivity InAs quantum-dot infrared photodetectors grown on InP by metal–organic chemical–vapor deposition Appl. High detectivit...

Journal: :Nanoscale 2014
Alireza Bonakdar Hooman Mohseni

Remarkable progress has been made in the fabrication and characterization of optical antennas that are integrated with optoelectronic devices. Herein, we describe the fundamental reasons for and experimental evidence of the dramatic improvements that can be achieved by enhancing the light-matter interaction via an optical antenna in both photon-emitting and -detecting devices. In addition, inte...

2012
F. Najafi E. Dauler R. J. Molnar K. K. Berggren F. Marsili

Related Articles Origin of intrinsic dark count in superconducting nanowire single-photon detectors Appl. Phys. Lett. 99, 161105 (2011) Si-interdiffusion in heavily doped AlN-GaN-based quantum well intersubband photodetectors Appl. Phys. Lett. 98, 241101 (2011) Spatial dependence of output pulse delay in a niobium nitride nanowire superconducting single-photon detector Appl. Phys. Lett. 98, 201...

2011
T. K. Parashar R. K. Lal J. K. Parashar

In this work an analytical modeling of p+-Hg0.81Cd0.19Te/n0-Hg0.81Cd0.19Te/CdZnTe, homojunction photodetector has been analyzed theoretically at 77K. A generic model of HgCdTe based photovoltaic detector has been developed using the closed form equations. Device parameters are obtained of the proposed photodetector and studied in terms of dark current, resistance area-product, quantum efficienc...

2004
Euclid Eberle Moon

Current alignment technology is incapable of satisfying the needs of imminent generations of lithography. This dissertation delineates a novel method of alignment and three-dimensional position metrology that is compatible with many forms of proximity lithography. The method is called Interferometric-Spatial-Phase Imaging (ISPI), and is based on encoding three-dimensional position information i...

Journal: :Applied Physics Letters 2021

We report on the noise performance characteristics of magnetic sensors using both tunnel junction (MTJ) and giant magnetoresistance (GMR) elements. Each sensor studied has a notably different detectivity. Of we measured, those based GMR multilayers have lowest However, also significantly smaller linear range. To make direct comparison between sensors, scale operating ranges each to be same. Thi...

Journal: :Review of Scientific Instruments 2014

Journal: :Nano letters 2012
Rongtao Lu Caleb Christianson Alec Kirkeminde Shenqiang Ren Judy Wu

Despite the potentials and the efforts put in the development of uncooled carbon nanotube infrared detectors during the past two decades, their figure-of-merit detectivity remains orders of magnitude lower than that of conventional semiconductor counterparts due to the lack of efficient exciton dissociation schemes. In this paper, we report an extraordinary photocurrent harvesting configuration...

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