We have tested the detection performance of a strip detector processed on silicon wafer grown by magnetic Czochralski (MCZ) method. This is the first time a full size Czochralski detector has been tested in a beam, although the advantages of CZ silicon have been known before. Prior to test beam measurements, the electrical characteristics of the Czochralski silicon detectors were found to be ap...

For a Czochralski growth of Ge crystal, thermal fields have been analysed numerically using the three-dimensional finite volume method (FLUENT package). The arrangement used in a real Czochralski crystal growth lab included a graphite crucible, heat shield, heating device, thermal insulation and chamber including two gas outlets. We have considered two cases for calculations, which are configur...

The Czochralski process is the only method used commercially for production of monocrystalline silicon for semiconductor and solar cell applications. This paper explores the use of mathematical modeling as an aid in estimation of system state variables in the standard Czochralski process. A state-space model of the process is presented, describing the dynamics of the crystal radius and meniscus...

We have made a quantitative study about the thermal activation of thermal donors in high resistivity magnetic Czochralski silicon. The thermal donor activation has been performed through a thermal treatment at 430 1C up to a total time of 80min. The space charge density after each annealing step has been extracted from capacitance–voltage measurements. If the starting material is boron-doped p-...

A computational approach to the study of three-dimensional instabilities of flows in a Czochralski crucible is proposed. The flow is driven by buoyancy, thermocapillarity and rotation of the crystal and the crucible. The thermal boundary conditions account for the prescribed temperatures or heat flux, as well as convective and radiative heating or cooling of the boundaries. The numerical approa...

The Czochralski method of the industrial production of a silicon single crystal consists of pulling up the single crystal from the silicon melt. The flow of the melt during the production is called the Czochralski flow. The mathematical description of the flow consists of a coupled system of six P.D.E. in cylindrical coordinates containing Navier-Stokes equations (with the stream function), hea...

We report on the Czochralski method for single silicon crystal growth and discuss heat and mass transfer and defect formation in the crystal. A re ector was used for separation of the heating and cooling areas in the furnace enabling us to speed up crystal growth. The melt ow to stabilize the temperature distribution in a crucible was controlled using transverse magnetic elds in a large-scale s...

The feasibility to grow bulk La-GPS:Ce scintillation crystals by the Czochralski method using Mo crucibles has been reported.