Heat EXchangers (HEX) that are used in City Gate Station (CGS) systems are modeled numerically to recover the exhaust waste heat. It was tried to find the best viscous model to obtain results in accordance with experimental results and to change the heat exchanger design. This HEX is used for recovering heat from exhaust flue gas with a mixture of 40% water and 60% ethylene glycol as the coolin...

Industrial plants are subjected to very dangerous events. Therefore, it is very essential to carry out an efficient risk and safety analysis. In classical applications, risk analysis treats event probabilities as certain data, while there is much penurious knowledge and uncertainty in generic failure data that will lead to biased and inconsistent alternative estimates. Then, in order to achieve...

Abstract City Gate Stations (CGS) are critical elements of Natural Gas (NG) distribution systems, as they connect national high-pressure transmission networks with local low-pressure networks. One their main tasks is to pre-heat the gas avoid dangerous sub-cooling due Joule-Thompson effect after pressure reduction stage. For this process, significant amounts thermal energy required, usually obt...

Considering the high costs of the implementation and maintenance of gas distribution networks in urban areas, optimal design of such networks is vital. Today, urban gas networks are implemented within a tree structure. These networks receive gas from City Gate Stations (CGS) and deliver it to the consumers. This study presents a comprehensive model based on Mixed Integer Nonlinear Programming (...

Gas industry as one of the greatest sectors energy, has a major role in environmental issues. A category energy intensive parts gas is heaters City Gate Stations which consume colossal volumes purified gases. Different optimization strategies to improve efficiency these entailing preheating, waste heat recovery exhausts, insulating pipelines and mounting economizers or recuperators even using r...

The charge/discharge phenomenon of capacitance between terminals in a power MOSFET affects on its switching behavior of the device. The input capacitance is composed of the gate-source capacitance CGS and the gate-drain capacitance CGD, which vary with gate voltage VGS. This paper characterizes the relationship between the input capacitance of a SiC MOSFET and the gate voltage with considering ...

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This study presents the temperature dependence of small signal parameters of GaN/SiC HEMTs across the 0–150◦C range. The changes with temperature for transconductance (gm), output impedance (Cds and Rds), feedback capacitance (Cdg), input capacitance (Cgs), and gate resistance (Rg) are measured. The variations with temperature are established for gm, Cds, Rds, Cdg, Cgs, and Rg in the GaN techno...