نتایج جستجو برای: Channel Spacer
تعداد نتایج: 234796 فیلتر نتایج به سال:
Spacers are used in spiral wound and plate and frame membrane modules to create flow channels between adjacent membrane layers and mix fluid within the flow channel. Flow through the spacer has a significant beneficial impact on mixing and resulting mass transfer rates but is accompanied by an undesirable increase in pressure drop. Computational Fluid Dynamics (CFD) is a common tool used to eva...
Computational fluid dynamics (CFD) simulations carried out in this paper show that spacer orientation has a major influence on temperature patterns and on the heat transfer rates. The local heat flux values significantly vary from high to very low values at each filament when spacer touches the membrane surface. The heat flux profile is more uniform when spacer filaments are not in contact with...
Impact of high-κ spacer in Asymmetric underlap double gate MOS transistor is systematically investigated with the help of a two dimensional device simulator. A significant improvement in ON current, transconductance and intrinsic gain is observed in the device using high-κ spacer material. However due to higher capacitances, device with high-κ spacer shows smaller unity gain cut-off frequency c...
Asynchronous design techniques are gaining attention in the scientific community for their ability to cope with current techneologies’ problems that the synchronous paradigm may fail to cope with. The quasi-delay-insensitive (QDI) design style [1] [2] is attractive to asynchronous circuits, especially because it allows wire and gate delays to be ignored given that isochronic fork [1] delay assu...
As scaling down MOSFET devices degrade device performance in term of leakage current and short channel effects. To overcome the problem a newer device Silicon-on-Insulator (SOI) MOSFET has been introduced. The Fully Depleted (FD) SOI MOSFETs also suffer from short channel effects (SCE) in the sub 65 nm regime due to reduction in threshold voltage. Several investigations are going to reduce the ...
A finite element based numerical model has been employed to describe momentum and mass transfer in open and spacer-filled crossflow membrane channels. Simulations considering operating conditions typical of seawater (SW), brackish water (BW), and reuse water (RW) reverse osmosis (RO) applications are employed for optimization of hypothetical spiral wound element feed spacer designs. Preliminary...
We have investigated the influence of the thickness of an undoped spacer layer under the channel on the current–voltage characteristics of GaAs MESFETs. To that purpose we have grown the active layers of the MESFETs on top of a 50 nm AlAs layer to separate the device effectively from the undoped GaAs substrate. Substrate leakage currents are of the order of 10−7 A at 30 V source–substrate bias....
N-face AlGaN (cap)/GaN (channel)/AlGaN (barrier)/GaN (buffer) high electron mobility transistors (HEMTs) provide a simple solution for strong confinement of the two-dimensional electron gas (2DEG) from the back since carriers are induced on top of the AlGaN barrier. To reduce the adverse effects of random alloy scattering from the AlGaN barrier, an N-face GaN-spacer HEMT was designed with an ep...
In this study, process enhancements achieved by the use of 3D printed feed spacers based on triply periodic minimal surfaces (TPMS) were comparatively assessed using two most common membrane distillation (MD) configurations: air gap (AGMD) and direct contact (DCMD). The MD performance was impact spacer design (TPMS vs. commercial spacer) flux channel pressure drop, their consequent levelized co...
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