نتایج جستجو برای: CNTFET modelling

تعداد نتایج: 162484  

Journal: :international journal of smart electrical engineering 2013
roya abdollahzadeh badelbo fardad farokhi alireza kashaniniya

in this article different types of artificial neural networks (ann) were used for cntfet (carbon nanotube transistors) simulation. cntfet is one of the most likely alternatives to silicon transistors due to its excellent electronic properties. in determining the accurate output drain current of cntfet, time lapsed and accuracy of different simulation methods were compared. the training data for...

2009
Rasmita Sahoo

As the scaling of Si MOSFET approaches towards its limiting value, new alternatives are coming up to overcome these limitations. In this paper first we have reviewed carbon nanotube field effect transistor (CNTFET) and types of CNTFET. We have then studied the effect of channel length and chirality on the drain current for planer CNTFET. The Id~Vd curves for planer CNTFETs having different chan...

2017
S. Tamil Selvan M. Sundararajan

In this paper, we have design of ternary 2x2 Sram memory Array using carbon Nano-tube field-effect transistors (CNTFETs).the CNTFET technology has new parameters and characteristics which determine the performances such as current driving capability, speed, power consumption and area of circuits have been proposed for ternary 2x2 Sram memory array is needed to optimize performance using CNTFET ...

Journal: :ECS Journal of Solid State Science and Technology 2022

Abstract This paper proposes a design of gate all around CNTFET based ternary content addressable memory (TCAM). TCAM cell is designed and simulated in HSPICE using top gated (TG-CNTFET) & CNTTFET (GAA-CNTFET). Dual chirality technique used to i.e. different for n-type p-type which utilizes threshold voltages hence improve the performance. Comparative analysis has been done various paramete...

2008
Si-Yu LIAO Cristell MANEUX Sébastien FREGONESE Thomas ZIMMER

By coating a thin layer of photosensitive polymer such as poly3-octylthiophene-2,5-diyl (P3OT), the Carbon Nanotube Field Effect Transistor (CNTFET) provides an optical gating phenomenon [1]. It is called Optical-Gated CNTFET (OG-CNTFET or OGCNTFET). Compared to the conventional CNTFET, the OG-CNTFET reveals a right hand shift of the drain current vs. gate bias voltage. If this device is under ...

2014
Nayana Remesh Reena Monica

Multipliers are one of the most important components in microprocessors and DSP processors [9]. Baugh Wooley is one among them and it is an array multiplier. Array multipliers have a more regular layout and it presents high speed performance. The paper deals with the design of a Baugh Wooley multiplier using Carbon Nanotube Field Effect Transistor (CNTFET). A Verilog-A formulation of the Stanfo...

In this article different types of artificial neural networks (ANN) were used for CNTFET (carbon nanotube transistors) simulation. CNTFET is one of the most likely alternatives to silicon transistors due to its excellent electronic properties. In determining the accurate output drain current of CNTFET, time lapsed and accuracy of different simulation methods were compared. The training data for...

2014
Kunal K Sharma P. Reena Monica

Carbon Nanotube Field Effect Transistor (CNTFET) has a wide scope in the field of Nanotechnology. These are currently considered as the replacement to the Si MOSFET. These devices show the ballistic transport in the current conduction. In this paper, a Verilog-A formulation of the Stanford compact model is used for the simulation of different logic gates in Cadence and finally Mod-16 Counter is...

Journal: :International Journal of VLSI Design & Communication Systems 2012

2015
Turja Nandy Arin Dutta Zahid Hasan Mahmood

In this review, we compare the distinct properties of Carbon Nanotube Field Effect Transistor (CNTFET) based applications with MOSFET based applications in memory and digital electronics technology. In nanoelectronics circuitry, CNTFET has opened new dimensions with extreme opportunities of improvement in circuit performance due to its extreme mobility, ballistic conduction and so forth. Apart ...

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