نتایج جستجو برای: Buffer layer
تعداد نتایج: 321916 فیلتر نتایج به سال:
Here, the effect of lightly Niobium doped TiO2 layer on the performance of perovskite solar cells has been studied by using solar cell capacitance simulator (SCAPS). N addition, the effects of Niobium concentration, buffer film thickness and operating temperature on the performance of the perovskite solar cell are investigated. For doping level of 3.0 mol% into the TiO2 layer, cell efficiency o...
In this paper, the performance of the buffer layer of Cadmium Telluride (CdTe) thin film solar cell was optimized using SCAPS software. At first, five different buffer layers including CdS, In2S3, ZnO, ZnSe and ZnS with variable thicknesses from 10 to 100 nm have been replaced in the structure of the solar cell and it has been observed. As the thickness of the buffer layer is increased, the eff...
the improvement of the physical properties of indium tin oxide (ito) layers is quite advantageous in photovoltaic applications. in this study the ito film is deposited by rf sputtering onto p-type crystalline silicon (c-si) with (100) orientation, multicrystalline silicon (mc-si), and glass substrates coated with zno and annealed in vacuum furnace at 400°c. electrical, optical, structural and m...
cu(in,ga)se2 thin films (cigs) on metallic substrate (titanium, molybdenum, aluminum, stainless steel) were prepared by a two-step selenization of co-evaporated metallic precursors in se-containing environment under n2 gas flow. structural properties of prepared thin film were studied. to characterize the optical quality and intrinsic defect nature low-temperature photoluminescence, were perfor...
The hydrogen H incorporation in the epitaxial graphene buffer layer on 6H-SiC 0001 with various H coverages is investigated using the density-functional method. The most stable site for a single H atom is on top of a threefold C atom in the graphene buffer layer, whereas the incorporation into the interfacial layer is less favored. However, when the H concentration is above 7.15 1014 cm−2, the ...
Using a model of oscillating dipoles, we simulate the intensity of the G-band in the Raman signal from structures consisting of graphene, separated by an arbitrary buffer layer from a substrate. It is found that a structure with an optimized buffer layer refractive index and thickness exhibits a Raman signal which is nearly 50 times more intense than that from the same structure with a non-opti...
The crystallographic orientation and easy axis of magnetic anisotropy in L10 FePt films were successfully modulated with Cu buffer layers. The FePt film directly grown on the Cr90Mo10 underlayer showed a (001) preferred orientation with out-of-plane magnetic anisotropy. As the Cu buffer layer thickness was z4 nm, the FePt films showed a (110) preferred orientation with in-plane magnetic anisotr...
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