in this paper, we calculate electron and hole impactionization coefficients in in0.52al0.48as using a monte carlo modelwhich has two valleys and two bands for electrons and holesrespectively. also, we calculate multiplication factor for electronand hole initiated multiplication regimes and breakdown voltagein in0.52al0.48as pin avalanche photodiodes. to validate themodel, we compare our simulat...

A model of a low noise high quantum efficiency n+np Germanium Photodiode utilizing ion implantation technique and subsequent drive-in diffusion in the n layer is presented. Numerical analysis is used to study the influence of junction depth and bulk concentration on the electric field profile and quantum efficiency. The performance of the device is theoretically treated especially at the wave-l...

in this paper, we calculate electron and hole impactionization coefficients in in0.52al0.48as using a monte carlo modelwhich has two valleys and two bands for electrons and holesrespectively. also, we calculate multiplication factor for electronand hole initiated multiplication regimes and breakdown voltagein in0.52al0.48as pin avalanche photodiodes. to validate themodel, we compare our simulat...

Articles you may be interested in Low-noise AlInAsSb avalanche photodiode Appl. Enhanced frequency response associated with negative photoconductance in an InGaAs/InAlAs avalanche photodetector Appl.

In this paper, we present a high accuracy laser range finder and velocimeter using ultra-fast time-to-digital converter (TDC). The system operation is based on the measuring the round-trip time of a narrow laser pulse. A low-dark current high-speed PIN photodiode is used to detect the triggered laser beam and to produce start signal. The pulsed laser diode generates 45W optical power at 30ns du...

In a direct detection receiver, incoming optical light wave electric field Er at receiver input is directly converted to an electrical current using a PIN-photodiode. When Er is weak, then an avalanche photodiode is used. So, the question is what do these diodes do and why/when is one preferred over the other. (Please refer to block diagram Fig 9.1(a)) To provide a brief introduction, photodiod...

Introduction Avalanche photodiode detectors (APD) have and will continue to be used in many diverse applications such as laser range finders, data communications or photon correlation studies. This paper discusses APD structures, critical performance parameter and excess noise factor. For low-light detection in the 200to 1150-nm range, the designer has three basic detector choices the silicon P...

This work presents a method for large signal characterization of avalanche photodiode (APD) where measurements were carried out using pulsed RF signal at different DC bias points to extract dispersive parameters of the avalanche photodiode. Pulsed optical excitation on the photodiode were synchronized with the pulsed RF signal using a synchronization circuit and in this way characterization of ...

BGO is expected to be plausible devices for soft gamma-ray detectors, because of a high detection efficiency for soft gamma-rays. Here we report on the good performance of BGO readout with PIN-photodiode or avalanche photodiode as a soft gamma-ray detector. We confirmed that the signal output of BGO becomes comparable to that of GSO when it is readout with photodiodes due to better matching bet...