نتایج جستجو برای: Atomistic model

تعداد نتایج: 2109643  

Journal: :Multiscale Modeling & Simulation 2013
B. Langwallner Christoph Ortner Endre Süli

We consider an atomistic model defined through an interaction field satisfying a variational principle, and can therefore be considered a toy model of (orbital free) density functional theory. We investigate atomistic-to-continuum coupling mechanisms for this atomistic model, paying special attention to the dependence of the atomistic subproblem on the atomistic region boundary and the boundary...

This paper deals with the calculation of the elastic properties for single-walled carbon nanotubes (SWCNTs) under axial deformation and hydrostatic pressure using the atomistic-based continuum approach and the deformation mapping technique. A hyperelastic model based on the higher-order Cauchy-Born (HCB) rule being applicable at finite strains and accounting for the chirality and material nonli...

In this paper, an atomistic based finite element model is developed to investigate the influence of topological defects on mechanical properties of graphene. The general in-plane stiffness matrix of the hexagonal network structure of graphene is found. Effective elastic modulus of a carbon ring is determined from the equivalence of molecular potential energy related to stretch and angular defor...

Journal: :international journal of nanoscience and nanotechnology 2011
s. basir jafari r. malekfar s. e. khadem

in this paper, the radial breathing mode (rbm) frequencies of multi-walled carbon nanotubes (mwcnts) are  obtained based on the multiple-elastic thin shell model. for this purpose, mwcnt is considered as a multiple concentric elastic thin cylindrical shells, which are coupled through van der waals (vdw) forces between two adjacent tubes. lennard-jones potential is used to calculate the vdw forc...

2011
B. Langwallner C. Ortner E. Süli Bernhard Langwallner Christoph Ortner Endre Süli

We consider an atomistic interaction potential in one dimension given through a minimization problem, which gives rise to a field. The forces on atoms are in this case given by local expressions involving this field. A convenient feature of this model is the existence of a weak formulation for the forces, which provides a natural connection point for the coupling with a continuum model. We sugg...

Journal: :Multiscale Modeling & Simulation 2008
Michael L. Parks Pavel B. Bochev Richard B. Lehoucq

Many atomistic/continuum coupling algorithms utilize an overlapping subdomain method, where boundary data for local solves in atomistic and discretized continuum subdomains is provided from local solves in neighboring subdomains. Such coupling algorithms are closely related to the classical alternating Schwarz domain decomposition method, although little to no convergence or error analysis exis...

2009
P. Bochev R. Lehoucq M. Parks S. Badia M. Gunzburger

In this paper we review recent developments in blending methods for atomistic-to-continuum (AtC) coupling in material statics problems. Such methods tie together atomistic and continuum models by using a bridge domain that connects the two models. There are several reasons why AtC coupling methods (of which blending methods are a subset) are important and have been subject to an increased inter...

Journal: :IEEE Transactions on Magnetics 2005

2009
M. LUSKIN C. ORTNER

The formation and motion of lattice defects such as cracks, dislocations, or grain boundaries, occurs when the lattice configuration loses stability, that is, when an eigenvalue of the Hessian of the lattice energy functional becomes negative. When the atomistic energy is approximated by a hybrid energy that couples atomistic and continuum models, the accuracy of the approximation can only be g...

Journal: :Microelectronics Reliability 2002
Nobuyuki Sano Kazuya Matsuzawa Mikio Mukai Noriaki Nakayama

We investigate the physics behind the ‘atomistic’ dopant model widely used in drift-diffusion (DD) simulators for the study of statistical threshold voltage variations in ultra-small MOSFETs. It is found that the conventional dopant model, when extended to the extreme atomistic regime, becomes physically inconsistent with the concepts of electric potential presumed in DD device simulations. The...

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