To find a suitable treatment in the preparation of Nb surface for platinum electrodeposition, different methods such as thermal oxidation, anodic oxidation, mechanical roughening, and mechanical roughening with subsequent anodic etching were examined. X-ray photoelectron spectroscopy was used to study the chemical composition of depth analysis of the surface. Moreover, in order to examine the m...

From the standpoint of processing, hard chromium layer plate may be applied to steels, cast iron, aluminum and nickel base alloys. Cast iron can be plated provided that the surface is capable of conducting the required current and is reasonably free of voids, pits, gross silicate inclusions, and massive segregation. There are many difficulties arising from graphite phase and deposition of hydro...

We have characterized glass-glass and glass-Si bonding processes for the fabrication of wide, shallow nanofluidic channels with depths down to the nanometer scale. Nanochannels on glass or Si substrate are formed by reactive ion etching or a wet etching process, and are sealed with another flat substrate either by glass-glass fusion bonding (550 degrees C) or an anodic bonding process. We demon...

In this work, an accelerating etching method for glass named thermal electrical modified etching (TEM etching) is investigated. Based on the identification of the effect in anodic bonding, a novel method for glass structure micromachining is proposed using TEM etching. To validate the method, TEM-etched glasses are prepared and their morphology is tested, revealing the feasibility of the new me...

We report on a study of the morphology of (100) silicon surfaces etched in aqueous alkaline solutions. It is shown that the formation of pyramidal hillocks during etching can be influenced in two different ways: by the presence of an oxidizing agent (ferricyanide or oxygen) in the etchant solution, or by etching under anodic bias. In both cases pyramid formation is suppressed without a signific...

Large-area, vertically aligned silicon nanowires with a uniform diameter along the height direction were fabricated by combining in situ-formed anodic aluminum oxide template and metal-assisted chemical etching. The etching rate of the Si catalyzed using a thick Au mesh is much faster than that catalyzed using a thin one, which is suggested to be induced by the charge transport process. The thi...

In this letter, we investigate the fabrication of Silicon nanostructure patterned on lightly doped (10(15) cm(-3)) p-type silicon-on-insulator by atomic force microscope nanolithography technique. The local anodic oxidation followed by two wet etching steps, potassium hydroxide etching for silicon removal and hydrofluoric etching for oxide removal, are implemented to reach the structures. The i...

In this paper, a single-mask substrate transfer process for the fabrication of high-aspect-ratio (HAR) suspended structures is presented. The HAR silicon structures are fabricated using a deep reactive ion etching (DRIE) technique and then transferred to a glass wafer using silicon/thin film/glass anodic bonding and silicon thinning techniques. The HAR structures are released using self-aligned...

new technique, at temperatures of 150°C or 450°C t provides planarization after a very deep etching step silicon is presented. Resist spinning and layer palerning as well as realization of bridges or cantilevers across deep holes becomes possible. The sacrificial wafer bonding technique contains a wafer bond step followed by an etch back. Results of (1) polymer bopding followed by dry etching a...