indium tin oxide (ito) thin films were deposited on glass substrates by rf sputtering using an ito ceramic target (in2o3-sno2, 90-10 wt. %). after deposition, samples were annealed at different temperatures in vacuum furnace. the post vacuum annealing effects on the structural, optical and electrical properties of ito films were investigated. polycrystalline ito films have been analyzed in wide...

Indium tin oxide (ITO) thin films were deposited on glass substrates by RF sputtering using an ITO ceramic target (In2O3-SnO2, 90-10 wt. %). After deposition, samples were annealed at different temperatures in vacuum furnace. The post vacuum annealing effects on the structural, optical and electrical properties of ITO films were investigated. Polycrystalline...

In this study we performed a series of ozone and vacuum annealing experiments on epitaxial La2-xSrxCuO4+δ thin films. The transition temperature after each annealing step has been measured by the mutual inductance technique. The relationship between the effective doping and the vacuum annealing time has been studied. Short-time ozone annealing at 4700C oxidizes an underdoped film all the way to...

Gallium and aluminum co-doped zinc oxide (GAZO) films were produced by magnetron sputtering. The GAZO films were post-annealed in either vacuum or hydrogen microwave plasma. Vacuum- and hydrogen microwave plasma-annealed GAZO films show different surface morphologies and lattice structures. The surface roughness and the spacing between adjacent (002) planes decrease; grain growth occurs for the...

Cu2ZnSnS4 (CZTS) thin films were prepared by directly sputteringCu (In,Ga)Se2 quaternary target consisting of (Cu: 25%, Zn: 12.5%, Sn; 12.5%and S: 50%). The composition and structure of CZTS layers have beeninvestigated after annealing at 200 0C, 350 0C and 500 0C under vacuum. Theresults show that recrystallization of the CZTS thin film occurs and increasingthe grain size with a preferred orie...

copper sulphide (cu 2 s) thin films at different thicknesses and annealing temperatures were deposited onto glass substrate by vacuum evaporation method. xrd study reveals the phase transformation of cu     2 s film at higher thickness. optical and resistivity study show the phase transformation of the film from cu     2 s to cus when they are annealed at higher temperature. sem st...

Conductive carbon films were prepared at room temperature by unbalanced magnetron sputtering (UBMS) on silicon substrates using argon (Ar) gas, and the effects of post-annealing temperature on the structural, tribological, and electrical properties of carbon films were investigated. Films were annealed at temperatures ranging from 400 °C to 700 °C in increments of 100 °C using a rapid thermal a...

Following a series of recent studies that demonstrated enhanced visible-light photocatalytic activities of TiO2 by annealing in reducing atmospheres, a systematic investigation was conducted, in which TiO2 nanoparticles were annealed in various controlled atmospheres with the estimated oxygen partial pressure being varied from 10 1 to 10 25 atm and presence of other species (Ar, H2, N2, vacuum ...