The lower solar atmosphere consists of partially ionized turbulent plasmas harbouring velocity field, magnetic field and current density fluctuations. The correlations amongst these small scale fluctuations give rise to large scale flows and magnetic fields which decisively affect all transport processes. The three fluid system consisting of electrons, ions and neutral particles supports nonide...

Tokamak plasma transport equations are usually obtained by flux surface averaging the collisional Braginskii equations. However, tokamak plasmas are not in collisional regimes. Also, ad hoc terms are added for: neoclassical effects on the parallel Ohm’s law; fluctuation-induced transport; heating, current-drive and flow sources and sinks; small magnetic field non-axisymmetries; magnetic field t...

Semiconductor nanowire field-effect transistors (FETs) are interesting for fundamental studies of charge transport as well as possible applications in electronics. Here, we report low-voltage, low-hysteresis and ambipolar PbSe nanowire FETs using electrolyte-gating with ionic liquids and ion gels. We obtain balanced hole and electron mobilities at gate voltages below 1 V. Due to the large effec...

Si nanowire (Si-NW) based thin-film transistors (TFTs) have been considered as a promising candidate for next-generation flexible and wearable electronics as well as sensor applications with high performance. Here, we have fabricated ambipolar Schottky-barrier (SB) TFTs consisting of a parallel array of Si-NWs and performed an in-depth study related to their electrical performance and operation...

We have fabricated suspended few-layer (1-3 layers) graphene nanoribbon field-effect transistors from unzipped multi-wall carbon nanotubes. Electrical transport measurements show that current annealing effectively removes the impurities on the suspended graphene nanoribbons, uncovering the intrinsic ambipolar transfer characteristic of graphene. Further increasing the annealing current creates ...

We report ambipolar charge transport in α-molybdenum ditelluride (MoTe2 ) flakes, whereby the temperature dependence of the electrical characteristics was systematically analyzed. The ambipolarity of the charge transport originated from the formation of Schottky barriers at the metal/MoTe2 contacts. The Schottky barrier heights as well as the current on/off ratio could be modified by modulating...

Ambipolar organic electronics offer great potential for simple and low-cost fabrication of complementary logic circuits on large-area and mechanically flexible substrates. Ambipolar transistors are ideal candidates for the simple and low-cost development of complementary logic circuits since they can operate as n-type and p-type transistors. Nevertheless, the experimental demonstration of ambip...

This paper re-examines the problem of ambipolar diffusion as a mechanism for the production and runaway evolution of centrally condensed molecular cloud cores, a process that has been termed the gravomagneto catastrophe. Our calculation applies in the geometric limit of a highly flattened core and allows for a semi-analytic treatment of the full problem, although physical fixes are required to ...

Ambipolar π-conjugated polymers may provide inexpensive large-area manufacturing of complementary integrated circuits (CICs) without requiring micro-patterning of the individual p- and n-channel semiconductors. However, current-generation ambipolar semiconductor-based CICs suffer from higher static power consumption, low operation frequencies, and degraded noise margins compared to complementar...

Double-Independent-Gate (DIG) Field Effect Transistors (FETs) are expected to extend Moore’s law in the coming years. Many emerging technologies present the possibility to have DIG FETs with one gate controlling online the device polarity. Such devices are called ambipolar transistors and efficiently embed the XOR function. Logic gates based on ambipolar transistors can implement more complex l...