RF magnetron sputtering is used on the ceramic targets, each of which contains zinc oxide (ZnO), zinc oxide doped with aluminum (AZO) and zinc oxide doped with gallium (GZO). The electric conduction mechanism of the AZO and GZO films came mainly from the Al and Ga, the oxygen vacancies, Zn interstitial atoms, and Al and/or Ga interstitial atoms. AZO and GZO films achieved higher conduction than...

Transparent conductive aluminum-doped ZnO (AZO) films were prepared by RF magnetron sputtering on glass substrates with specifically designed ZnO target using high-purity of zinc oxide (99.99%) and aluminum hydroxide (99.99%) powders. Systematic study on dependence of target-to-substrate distance (D ) on structural, electrical and optical properties of the as-grown AZO ts films was mainly inves...

Aluminum-doped zinc oxide (AZO) is a tunable low-loss plasmonic material capable of supporting dopant concentrations high enough to operate at telecommunication wavelengths. Due to its ultrahigh conformality and compatibility with semiconductor processing, atomic layer deposition (ALD) is a powerful tool for many plasmonic applications. However, despite many attempts, high-quality AZO with a pl...

Highly oriented undoped and aluminum-doped ZnO (AZO) films in the (002) direction were prepared by RF magnetron sputtering on glass substrates with specifically designed ZnO targets containing different amounts of Al(OH) powder as doping 3 source. A systematic study of the influence of deposition parameters such as Al(OH) content in the target, the target–substrate 3 distance (D ), deposition t...

In this paper, we demonstrate the application of ZnO doped with gallium (GZO), aluminum (AZO) and germanium (GeZO) nanocrystals as novel plasmonic and chemiresistive sensors for the detection of hazardous gases including hydrogen (H2) and nitrogen dioxide (NO2). GZO, AZO and GeZO nanocrystals are obtained by non-aqueous colloidal heat-up synthesis with high transparency in the visible range and...

ZnO is a promising material suitable for variety of novel electronic applications including sensors, transistors, and solar cells. Intrinsic ZnO film has inferiority in terms of electronic properties, which has prompted researches and investigations on doped ZnO films in order to improve its electronic properties. In this work, aluminum (Al) doped ZnO (AZO) with various concentrations and undop...

a r t i c l e i n f o Keywords: Aluminum doped zinc oxide Post-annealing Dielectric barrier discharge Indium–tin oxide DC magnetron X-ray photoelectron spectroscopy Aluminum-doped zinc oxide (AZO) is a material that can have high electrical conductivity while being highly transparent at the same time. It has been used in many applications such as displays, mobile devices and solar cells. Curren...

This letter demonstrates bi-layer channel Al-doped ZnO/ZnO thin film transistors (AZO/ZnO TFTs) via atomic layer deposition process at a relatively low temperature. The effects of annealing in oxygen atmosphere at different temperatures have also been investigated. The ALD bi-layer channel AZO/ZnO TFTs annealed in dry O2 at 300 °C exhibit a low leakage current of 2.5 × 10-13A, I on/I off ratio ...

In this paper, the transparent conductive aluminum-doped zinc oxide (ZnO: Al, AZO) thin films with different annealing conditions are studied. The AZO thin films were prepared on the Coring glass substrate by RF magnetron sputtering. The AZO thin films were annealed in atmosphere of vacuum and hydrogen at temperatures from 100 to 400°C in steps of 100°C for 1 min, respectively, to investigate t...

The thin layers of ZnO and ZnO: Al (Al doped zinc oxide—AZO) were deposited by the atomic deposition layer (ALD) method on silicon glass substrates. structures using diethylzinc (DEZ) deionized water as oxygen precursors. A precursor trimethylaluminum (TMA) was used to introduce aluminum dopant. present study ALD-deposited AZO films motivated their applications in photovoltaics. We attempted ex...