in this paper we propose and simulate a new heterostructure mesfet, called δ-doped ldd hmesfet. to improve carrier velocity in vicinity of the source in channel of gaas mesfet, one can replace source with alxga 1-x as. by increasing al content, discontinuity of hetero-interface could be increased. therefore, the velocity increases in the low field. however, increasing al mole fraction in excess...

High quality and large size Al-doped CsLiB6O10 (CLBO) single crystals have been successfully grown by top-seeded solution growth (TSSG) technique using Cs2O–Li2O–MoO3 fluxes. The advantages of this newly developed flux system were investigated by viscosity measurements and growth experiments. Al-doped CLBO presents a very high transmittance in the visible region and the weak absorption values a...

Metal-doped zinc oxide (ZnO) nanorod arrays have attracted much attention due to improvement in their electrical, structural, and optical properties upon doping. In this chapter, we discuss the effects of aluminum (Al)and iron (Fe)-doping on ZnO nanorod arrays properties particularly for humidity sensor applications. Compared to Fe, Al shows more promising characteristics as doping element for ...

ZnO is a promising material suitable for variety of novel electronic applications including sensors, transistors, and solar cells. Intrinsic ZnO film has inferiority in terms of electronic properties, which has prompted researches and investigations on doped ZnO films in order to improve its electronic properties. In this work, aluminum (Al) doped ZnO (AZO) with various concentrations and undop...

Vapor phase transport (VPT) assisted by mixture of methanol and acetone via thermal evaporation of brass (CuZn) was used to prepare un-doped and Al-doped zinc oxide (ZnO) nanostructures (NSs). The structure and morphology were characterized by field emission scanning electron microscopy (FESEM) and x-ray diffraction (XRD). Photoluminescence (PL) properties of un-doped and Al-doped ZnO showed si...