High nitrogen doped 300 mm silicon wafers annealed in 100 % argon ambient were investigated whether modified pulling conditions will lead to improved slip behavior and homogeneous radial oxygen precipitation. It turned out that increasing of the cooling rate during crystal pulling is beneficial on these wafer defect parameters. The void morphology was investigated by TEM and oxygen precipitatio...

OVERVIEW: There is an increased demand for the production of nextgeneration super-high-speed and low-power-consumption CMOS (complementary metal-oxide semiconductor) devices using SOI (silicon on insulator). Major global device manufacturers are actively commercializing this product. In SOI technology, a device is fabricated in a silicon layer (SOI layer) formed on a BOX (buried oxide) film. Al...

Process failures caused by particles in Ultra Pure Water (UPW) are relatively infrequent events, but with the move to 300 mm wafers and 90 nm line widths, they can have significant financial impact. Most particle monitoring strategies in the past focused on the use of the mobile and inline high sensitivity 0.05 micron particle counters. This paper examines the opportunities to improve performan...

Roll-to-roll (RTR) process requires a linear surface treatment source in various processes such as pre-treatment, etching, and deposition. For high speed and large width processes the linear source should have superior characteristics that can be applied to 100~300 m/mim process and large width treatment up to 2 m. Several linear surface treatment sources have been proposed to the RTR process. ...