In this paper, the performance of a new CVD reactor (called PE1O8) designed by LPE and developed in European project REACTION to process uniform 4H-SiC homoepitaxy on 200 mm substrate is reported. Its tunable multi-zone injection system gas delivery configuration ensure distribution throughout substrate. Excellent thickness doping uniformity substrates are achieved with run-to-run variation les...

200 mm diameter n-type 4H SiC wafers were produced from bulk crystals grown using a physical vapor transport (PVT) method. The configuration of the growth cell was modified to both allow for larger with respect standard 150 process, and induce thermal environment necessary increase mass deposition rate. A 25% in rate achieved relative process. resulting exhibited resistivity uniformity comparab...

Plants are frequently subjected to different kinds of stress, such as salinity and, like other organisms, they have evolved strategies for preventing and repairing cellular damage caused by salt stress. Glycine max L. plants were subjected to different NaCl concentrations (0-200 mM) for 10 days. Treatments with 100 and 200 mM NaCl induced ion leakage and lipid peroxidation augmentation, loss in...