in this study an ultra-broad band, low-power, and high-gain cmos distributed amplifier (cmos-da) utilizing a new gain-cell based on the inductively peaking cascaded structure is presented. it is created bycascading of inductively coupled common-source (cs) stage and regulated cascode configuration (rgc).the proposed three-stage da is simulated in 0.13 μm cmos process. it achieves flat and high ...